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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UJ3C065080B3

UJ3C065080B3

MOSFET N-CH 650V 25A TO263

UnitedSiC

5390 7.92
- +

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UJ3C065080B3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - 650 V 25A (Tc) 12V 111mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UF3C170400K3S

UF3C170400K3S

SICFET N-CH 1700V 7.6A TO247-3

UnitedSiC

20849 9.48
- +

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UF3C170400K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1700 V 7.6A (Tc) 12V 515mOhm @ 5A, 12V 6V @ 10mA 27.5 nC @ 15 V ±25V 740 pF @ 100 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4C075060K4S

UJ4C075060K4S

SICFET N-CH 750V 28A TO247-4

UnitedSiC

2828 10.59
- +

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UJ4C075060K4S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 28A (Tc) - 74mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C065030B3

UF3C065030B3

MOSFET N-CH 650V 65A TO263

UnitedSiC

3676 19.39
- +

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UF3C065030B3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - 650 V 65A (Tc) 12V 35mOhm @ 40A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 242W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UF3C120080K3S

UF3C120080K3S

SICFET N-CH 1200V 33A TO247-3

UnitedSiC

19055 15.92
- +

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UF3C120080K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C120080K3S

UJ3C120080K3S

SICFET N-CH 1200V 33A TO247-3

UnitedSiC

9065 15.94
- +

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UJ3C120080K3S

Datenblatt

Tube - Not For New Designs N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120080K4S

UF3C120080K4S

SICFET N-CH 1200V 33A TO247-4

UnitedSiC

2852 15.94
- +

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UF3C120080K4S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4C075018K3S

UJ4C075018K3S

SICFET N-CH 750V 81A TO247-3

UnitedSiC

7535 19.12
- +

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UJ4C075018K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 81A (Tc) - 23mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 385W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C065030T3S

UF3C065030T3S

MOSFET N-CH 650V 85A TO220-3

UnitedSiC

5201 19.39
- +

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UF3C065030T3S

Datenblatt

Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C065030T3S

UJ3C065030T3S

MOSFET N-CH 650V 85A TO220-3

UnitedSiC

1831 19.39
- +

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UJ3C065030T3S

Datenblatt

Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4C075018K4S

UJ4C075018K4S

SICFET N-CH 750V 81A TO247-4

UnitedSiC

1756 19.59
- +

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UJ4C075018K4S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 81A (Tc) - 23mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 385W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C065030K4S

UF3C065030K4S

MOSFET N-CH 650V 85A TO247-4

UnitedSiC

1988 20.16
- +

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UF3C065030K4S

Datenblatt

Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C120040K3S

UJ3C120040K3S

SICFET N-CH 1200V 65A TO247-3

UnitedSiC

1972 29.30
- +

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UJ3C120040K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 65A (Tc) 12V 45mOhm @ 40A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120040K3S

UF3C120040K3S

SICFET N-CH 1200V 65A TO247-3

UnitedSiC

1063 29.30
- +

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UF3C120040K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 65A (Tc) 12V 45mOhm @ 40A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120040K4S

UF3C120040K4S

SICFET N-CH 1200V 65A TO247-4

UnitedSiC

918 29.30
- +

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UF3C120040K4S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 65A (Tc) 12V 45mOhm @ 40A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4SC075009K4S

UJ4SC075009K4S

750V/9MOHM, SIC, STACKED CASCODE

UnitedSiC

193 39.32
- +

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UJ4SC075009K4S

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 106A (Tc) 12V 11.5mOhm @ 70A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3340 pF @ 400 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3SC120016K3S

UF3SC120016K3S

SICFET N-CH 1200V 107A TO247-3

UnitedSiC

890 53.01
- +

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UF3SC120016K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 107A (Tc) 12V 21mOhm @ 50A, 12V 6V @ 10mA 218 nC @ 15 V ±20V 7824 pF @ 800 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3SC120016K4S

UF3SC120016K4S

SICFET N-CH 1200V 107A TO247-4

UnitedSiC

2390 56.25
- +

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UF3SC120016K4S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 107A (Tc) 12V 21mOhm @ 50A, 12V 6V @ 10mA 218 nC @ 15 V ±20V 7824 pF @ 800 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3SC065007K4S

UF3SC065007K4S

MOSFET N-CH 650V 120A TO247-4

UnitedSiC

948 78.82
- +

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UF3SC065007K4S

Datenblatt

Tube - Active N-Channel - 650 V 120A (Tc) 12V 9mOhm @ 50A, 12V 6V @ 10mA 214 nC @ 15 V ±20V - - 789W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3SC120009K4S

UF3SC120009K4S

SICFET N-CH 1200V 120A TO247-4

UnitedSiC

2331 86.77
- +

In den Warenkorb

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UF3SC120009K4S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 120A (Tc) 12V 11mOhm @ 100A, 12V 6V @ 10mA 234 nC @ 15 V ±20V 8512 pF @ 100 V - 789W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 68 Records«Prev1234Next»
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