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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
RS3M V6G

RS3M V6G

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

2255 0.16
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RS3M V6G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 500 ns 10 µA @ 1000 V - 3A -55°C ~ 150°C -
BAS16WS-G3-18

BAS16WS-G3-18

DIODE GEN PURP 75V 250MA SOD323

Vishay General Semiconductor - Diodes Division

3136 0.04
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BAS16WS-G3-18

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 2pF @ 0V, 1MHz 6 ns 1 µA @ 75 V 75 V 250mA -55°C ~ 150°C 1.25 V @ 150 mA
SSB43L-M3/5BT

SSB43L-M3/5BT

DIODE SCHOTTKY 4A 30V DO-214AC

Vishay General Semiconductor - Diodes Division

2914 0.16
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 600 µA @ 30 V 30 V 4A -65°C ~ 150°C 490 mV @ 4 A
BAS19-G3-18

BAS19-G3-18

DIODE GEN PURP 100V 200MA SOT23

Vishay General Semiconductor - Diodes Division

3164 0.04
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BAS19-G3-18

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 100 V 100 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
SSB43L-M3/52T

SSB43L-M3/52T

DIODE SCHOTTKY 4A 30V DO-214AA

Vishay General Semiconductor - Diodes Division

3078 0.16
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 600 µA @ 30 V 30 V 4A -65°C ~ 150°C 450 mV @ 4 A
BAS20-G3-18

BAS20-G3-18

DIODE GEN PURP 150V 200MA SOT23

Vishay General Semiconductor - Diodes Division

3896 0.04
- +

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BAS20-G3-18

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 150 V 150 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
EGL41A-E3/96

EGL41A-E3/96

DIODE GEN PURP 50V 1A DO213AB

Vishay General Semiconductor - Diodes Division

2247 0.16
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EGL41A-E3/96

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1 V @ 1 A
BAS21-G3-18

BAS21-G3-18

DIODE GEN PURP 200V 200MA SOT23

Vishay General Semiconductor - Diodes Division

3549 0.04
- +

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BAS21-G3-18

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 200 V 200 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
EGL41F-E3/96

EGL41F-E3/96

DIODE GEN PURP 300V 1A DO213AB

Vishay General Semiconductor - Diodes Division

3003 0.16
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EGL41F-E3/96

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 14pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 1A -65°C ~ 175°C 1.25 V @ 1 A
BAS19-G3-08

BAS19-G3-08

DIODE GEN PURP 100V 200MA SOT23

Vishay General Semiconductor - Diodes Division

2366 0.04
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BAS19-G3-08

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 100 V 100 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
SS15

SS15

DIODE SCHOTTKY 50V 1A DO214AC

Taiwan Semiconductor Corporation

2823 0.16
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 50 V 50 V 1A (DC) -55°C ~ 150°C 750 mV @ 1 A
BAS20-G3-08

BAS20-G3-08

DIODE GEN PURP 150V 200MA SOT23

Vishay General Semiconductor - Diodes Division

3015 0.04
- +

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BAS20-G3-08

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 150 V 150 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
CRS14(TE85L,Q,M)

CRS14(TE85L,Q,M)

DIODE SCHOTTKY 30V 2A S-FLAT

Toshiba Semiconductor and Storage

2609 0.16
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CRS14(TE85L,Q,M)

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 90pF @ 10V, 1MHz - 50 µA @ 30 V 30 V 2A -40°C ~ 150°C 490 mV @ 2 A
BAS21-G3-08

BAS21-G3-08

DIODE GEN PURP 200V 200MA SOT23

Vishay General Semiconductor - Diodes Division

3997 0.04
- +

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BAS21-G3-08

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 200 V 200 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
CRS15(TE85L,Q,M)

CRS15(TE85L,Q,M)

DIODE SCHOTTKY 30V 3A S-FLAT

Toshiba Semiconductor and Storage

2160 0.16
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CRS15(TE85L,Q,M)

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 90pF @ 10V, 1MHz - 50 µA @ 30 V 30 V 3A (DC) -40°C ~ 150°C 520 mV @ 3 A
RB530CM-40T2R

RB530CM-40T2R

40V, 100MA, SOD-923, SCHOTTKY BA

Rohm Semiconductor

2809 0.42
- +

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Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount - - 2 µA @ 40 V 40 V 100mA 150°C 480 mV @ 10 mA
SSA23LHE3_A/H

SSA23LHE3_A/H

DIODE SCHOTTKY 30V 2A DO214AC

Vishay General Semiconductor - Diodes Division

3564 0.16
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SSA23LHE3_A/H

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 30 V 30 V 2A -65°C ~ 150°C 450 mV @ 2 A
RB531CM-40T2R

RB531CM-40T2R

40V, 100MA, SOD-923, SCHOTTKY BA

Rohm Semiconductor

3393 0.42
- +

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Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount - - 25 µA @ 40 V 40 V 100mA 125°C 410 mV @ 10 mA
RS3D V6G

RS3D V6G

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation

2275 0.16
- +

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RS3D V6G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 150 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C -
RB531CM-30T2R

RB531CM-30T2R

30V, 100MA, SOD-923, SCHOTTKY BA

Rohm Semiconductor

3194 0.42
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Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount - - 7 µA @ 10 V 30 V 100mA 125°C 370 mV @ 10 mA
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