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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
1N4003GL TR

1N4003GL TR

DIODE GEN PURP 200V 1A DO41

Central Semiconductor Corp

3966 0.00
- +

In den Warenkorb

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SF803GHC0G

SF803GHC0G

DIODE GEN PURP 150V 8A TO220AB

Taiwan Semiconductor Corporation

2087 0.00
- +

In den Warenkorb

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SF803GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 8A -55°C ~ 150°C 975 mV @ 8 A
1N4004GPP TR

1N4004GPP TR

DIODE GEN PURP 400V 1A DO41

Central Semiconductor Corp

2533 0.00
- +

In den Warenkorb

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1N4004GPP TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SF804G C0G

SF804G C0G

DIODE GEN PURP 200V 8A TO220AB

Taiwan Semiconductor Corporation

2407 0.00
- +

In den Warenkorb

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SF804G C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 975 mV @ 8 A
1N4004SP TR

1N4004SP TR

DIODE GEN PURP 400V 1A DO41

Central Semiconductor Corp

2436 0.00
- +

In den Warenkorb

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1N4004SP TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SF804GHC0G

SF804GHC0G

DIODE GEN PURP 200V 8A TO220AB

Taiwan Semiconductor Corporation

2958 0.00
- +

In den Warenkorb

Jetzt anfragen

SF804GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 975 mV @ 8 A
1N4005GL TR

1N4005GL TR

DIODE GEN PURP 600V 1A DO41

Central Semiconductor Corp

3484 0.00
- +

In den Warenkorb

Jetzt anfragen

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SF805G C0G

SF805G C0G

DIODE GEN PURP 300V 8A TO220AB

Taiwan Semiconductor Corporation

2546 0.00
- +

In den Warenkorb

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SF805G C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 8A -55°C ~ 150°C 1.3 V @ 8 A
1N4005GPP TR

1N4005GPP TR

DIODE GEN PURP 600V 1A DO41

Central Semiconductor Corp

2275 0.00
- +

In den Warenkorb

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1N4005GPP TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SF805GHC0G

SF805GHC0G

DIODE GEN PURP 300V 8A TO220AB

Taiwan Semiconductor Corporation

3740 0.00
- +

In den Warenkorb

Jetzt anfragen

SF805GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 8A -55°C ~ 150°C 1.3 V @ 8 A
1N4006 TR

1N4006 TR

DIODE GEN PURP 800V 1A DO41

Central Semiconductor Corp

3875 0.00
- +

In den Warenkorb

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1N4006 TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 5 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SF806G C0G

SF806G C0G

DIODE GEN PURP 400V 8A TO220AB

Taiwan Semiconductor Corporation

2155 0.00
- +

In den Warenkorb

Jetzt anfragen

SF806G C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 8A -55°C ~ 150°C 1.3 V @ 8 A
1N4007GPP TR

1N4007GPP TR

DIODE GEN PURP 1KV 1A DO41

Central Semiconductor Corp

3151 0.00
- +

In den Warenkorb

Jetzt anfragen

1N4007GPP TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SF806GHC0G

SF806GHC0G

DIODE GEN PURP 400V 8A TO220AB

Taiwan Semiconductor Corporation

3290 0.00
- +

In den Warenkorb

Jetzt anfragen

SF806GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 8A -55°C ~ 150°C 1.3 V @ 8 A
SMD12HE-TP

SMD12HE-TP

DIODE SCHOTTKY 20V 1A SOD123HE

Micro Commercial Co

2995 0.00
- +

In den Warenkorb

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SMD12HE-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 500 µA @ 20 V 20 V 1A -55°C ~ 125°C 500 mV @ 2 A
SF807G C0G

SF807G C0G

DIODE GEN PURP 500V 8A TO220AB

Taiwan Semiconductor Corporation

3107 0.00
- +

In den Warenkorb

Jetzt anfragen

SF807G C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 8A -55°C ~ 150°C 1.7 V @ 8 A
SMD13HE-TP

SMD13HE-TP

DIODE SCHOTTKY 30V 1A SOD123HE

Micro Commercial Co

2549 0.00
- +

In den Warenkorb

Jetzt anfragen

SMD13HE-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 500 µA @ 30 V 30 V 1A -55°C ~ 125°C 500 mV @ 2 A
SF807GHC0G

SF807GHC0G

DIODE GEN PURP 500V 8A TO220AB

Taiwan Semiconductor Corporation

3424 0.00
- +

In den Warenkorb

Jetzt anfragen

SF807GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 8A -55°C ~ 150°C 1.7 V @ 8 A
SMD15HE-TP

SMD15HE-TP

DIODE SCHOTTKY 50V 1A SOD123HE

Micro Commercial Co

3473 0.00
- +

In den Warenkorb

Jetzt anfragen

SMD15HE-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 500 µA @ 50 V 50 V 1A -55°C ~ 150°C 700 mV @ 2 A
SF808GHC0G

SF808GHC0G

DIODE GEN PURP 600V 8A TO220AB

Taiwan Semiconductor Corporation

3093 0.00
- +

In den Warenkorb

Jetzt anfragen

SF808GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 8A -55°C ~ 150°C 1.7 V @ 8 A
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