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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
1N5819 B0G

1N5819 B0G

DIODE SCHOTTKY 40V 1A DO204AL

Taiwan Semiconductor Corporation

3511 0.00
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1N5819 B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 55pF @ 4V, 1MHz - 1 mA @ 40 V 40 V 1A -55°C ~ 125°C 600 mV @ 1 A
MUR440S R7

MUR440S R7

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3539 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.25 V @ 4 A
1N5819HB0G

1N5819HB0G

DIODE SCHOTTKY 40V 1A DO204AL

Taiwan Semiconductor Corporation

3159 0.00
- +

In den Warenkorb

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1N5819HB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 55pF @ 4V, 1MHz - 1 mA @ 40 V 40 V 1A -55°C ~ 125°C 600 mV @ 1 A
SK84C R6

SK84C R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3182 0.00
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 40 V 40 V 8A (DC) -55°C ~ 125°C 550 mV @ 8 A
1N5820 B0G

1N5820 B0G

DIODE SCHOTTKY 20V 3A DO201AD

Taiwan Semiconductor Corporation

2430 0.00
- +

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1N5820 B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 20 V 20 V 3A -55°C ~ 125°C 475 mV @ 3 A
RS3A R6

RS3A R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2603 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 1.3 V @ 3 A
1N5820HB0G

1N5820HB0G

DIODE SCHOTTKY 20V 3A DO201AD

Taiwan Semiconductor Corporation

3728 0.00
- +

In den Warenkorb

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1N5820HB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 20 V 20 V 3A -55°C ~ 125°C 475 mV @ 3 A
MUR310S R7

MUR310S R7

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

2830 0.00
- +

In den Warenkorb

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C 875 mV @ 3 A
1N5821 B0G

1N5821 B0G

DIODE SCHOTTKY 30V 3A DO201AD

Taiwan Semiconductor Corporation

2968 0.00
- +

In den Warenkorb

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1N5821 B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 30 V 30 V 3A -55°C ~ 125°C 500 mV @ 3 A
HS5K R6G

HS5K R6G

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2349 0.00
- +

In den Warenkorb

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 5A (DC) -55°C ~ 150°C 1.7 V @ 5 A
1N5821HB0G

1N5821HB0G

DIODE SCHOTTKY 30V 3A DO201AD

Taiwan Semiconductor Corporation

2839 0.00
- +

In den Warenkorb

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1N5821HB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 30 V 30 V 3A -55°C ~ 125°C 500 mV @ 3 A
S4A R6G

S4A R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3147 0.00
- +

In den Warenkorb

Jetzt anfragen

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 4A -55°C ~ 150°C 1.15 V @ 4 A
1N5822 B0G

1N5822 B0G

DIODE SCHOTTKY 40V 3A DO201AD

Taiwan Semiconductor Corporation

3222 0.00
- +

In den Warenkorb

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1N5822 B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 3A -55°C ~ 125°C 525 mV @ 3 A
ES3C R6G

ES3C R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2666 0.00
- +

In den Warenkorb

Jetzt anfragen

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
SS33 M6

SS33 M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3664 0.00
- +

In den Warenkorb

Jetzt anfragen

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 30 V 30 V 3A (DC) -55°C ~ 125°C 500 mV @ 3 A
1N5822HB0G

1N5822HB0G

DIODE SCHOTTKY 40V 3A DO201AD

Taiwan Semiconductor Corporation

2322 0.00
- +

In den Warenkorb

Jetzt anfragen

1N5822HB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 3A -55°C ~ 125°C 525 mV @ 3 A
RS3J R6

RS3J R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2620 0.00
- +

In den Warenkorb

Jetzt anfragen

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 250 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.3 V @ 3 A
2A01G B0G

2A01G B0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

2132 0.00
- +

In den Warenkorb

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2A01G B0G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.1 V @ 2 A
ES3D R6G

ES3D R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2800 0.00
- +

In den Warenkorb

Jetzt anfragen

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
2A01GHB0G

2A01GHB0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

3604 0.00
- +

In den Warenkorb

Jetzt anfragen

2A01GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.1 V @ 2 A
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