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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
PMEG45A10EPD

PMEG45A10EPD

PMEG45A10EPD - 45 V, 10 A LOW VF

Rochester Electronics, LLC

3647 0.25
- +

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PMEG45A10EPD

Datenblatt

Bulk RoHS - - Active - - - - - - - -
SS10PH10HM3_A/I

SS10PH10HM3_A/I

DIODE SCHOTTKY 100V 10A TO277A

Vishay General Semiconductor - Diodes Division

489 0.98
- +

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SS10PH10HM3_A/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 270pF @ 4V, 1MHz - 10 µA @ 100 V 100 V 10A -55°C ~ 175°C 880 mV @ 10 A
S1GMHRSG

S1GMHRSG

DIODE GEN PURP 400V 1A MICRO SMA

Taiwan Semiconductor Corporation

130 0.35
- +

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S1GMHRSG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 5pF @ 4V, 1MHz 780 ns 1 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
WNSC021200Q

WNSC021200Q

SILICON CARBIDE POWER DIODE

WeEn Semiconductors

2970 2.94
- +

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WNSC021200Q

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 109pF @ 1V, 1MHz 0 ns 20 µA @ 1200 V 1200 V 2A 175°C (Max) 1.6 V @ 2 A
BY203-20STR

BY203-20STR

DIODE AVALANCHE 2KV 250MA SOD57

Vishay General Semiconductor - Diodes Division

654 0.89
- +

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BY203-20STR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 300 ns 2 µA @ 1200 V 2000 V 250mA -55°C ~ 150°C 2.4 V @ 200 mA
6A10-G

6A10-G

DIODE GEN PURP 1KV 6A R6

Comchip Technology

470 0.60
- +

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6A10-G

Datenblatt

Cut Tape (CT),Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 6A -55°C ~ 125°C 1 V @ 6 A
HER303BULK

HER303BULK

DIODE GEN PURP 200V 3A DO201AD

EIC SEMICONDUCTOR INC.

2500 0.25
- +

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HER303BULK

Datenblatt

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 3A -65°C ~ 150°C 1.1 V @ 3 A
STB15200TR

STB15200TR

DIODE SCHOTTKY 200V D2PAK

SMC Diode Solutions

373 0.98
- +

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STB15200TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 160 µA @ 200 V 200 V - -55°C ~ 150°C 1.1 V @ 15 A
EU 2AV1

EU 2AV1

DIODE GEN PURP 600V 1A AXIAL

Sanken

120 0.35
- +

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EU 2AV1

Datenblatt

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 600 V 600 V 1A -40°C ~ 150°C 1.4 V @ 1 A
STPSC8H065B-TR

STPSC8H065B-TR

DIODE SCHOTTKY 650V 8A DPAK

STMicroelectronics

1596 2.98
- +

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STPSC8H065B-TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 414pF @ 0V, 1MHz 0 ns 80 µA @ 650 V 650 V 8A -40°C ~ 175°C 1.75 V @ 8 A
CMSH3-20M TR13 PBFREE

CMSH3-20M TR13 PBFREE

DIODE SCHOTTKY 20V 3A SMB

Central Semiconductor Corp

519 0.89
- +

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CMSH3-20M TR13 PBFREE

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 280pF @ 4V, 1MHz - 500 µA @ 20 V 20 V 3A -65°C ~ 150°C 550 mV @ 3 A
EK 16V1

EK 16V1

DIODE SCHOTTKY 60V 1.5A AXIAL

Sanken

477 0.60
- +

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EK 16V1

Datenblatt

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 1 mA @ 60 V 60 V 1.5A -40°C ~ 150°C 620 mV @ 1.5 A
BAS116E6327HTSA1

BAS116E6327HTSA1

DIODE GEN PURP 80V 250MA SOT23-3

Infineon Technologies

1367 0.25
- +

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BAS116E6327HTSA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Not For New Designs Surface Mount 2pF @ 0V, 1MHz 1.5 µs 5 nA @ 75 V 80 V 250mA (DC) 150°C (Max) 1.25 V @ 150 mA
RURD660S9A-F085

RURD660S9A-F085

DIODE GEN PURP 600V 6A TO252AA

onsemi

266 0.98
- +

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RURD660S9A-F085

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 83 ns 100 µA @ 600 V 600 V 6A -55°C ~ 175°C 1.5 V @ 6 A
CDBA1150-HF

CDBA1150-HF

DIODE SCHOTTKY 150V 1A DO214AC

Comchip Technology

102 0.35
- +

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CDBA1150-HF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 120pF @ 4V, 1MHz - 500 µA @ 150 V 150 V 1A (DC) -50°C ~ 175°C 870 mV @ 1 A
SICU0460B-TP

SICU0460B-TP

650V,4A,SIC SBD,TO-252 PACKAGE

Micro Commercial Co

2435 3.00
- +

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SICU0460B-TP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 200pF @ 0V, 1MHz - 15 µA @ 650 V 650 V 4A -55°C ~ 175°C 1.8 V @ 4 A
V20PWM45HM3/I

V20PWM45HM3/I

DIODE SCHOTTKY 45V 20A SLIMDPAK

Vishay General Semiconductor - Diodes Division

322 0.89
- +

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V20PWM45HM3/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 3100pF @ 4V, 1MHz - 700 µA @ 45 V 45 V 20A -40°C ~ 175°C 660 mV @ 20 A
ES2B R5G

ES2B R5G

DIODE GEN PURP 100V 2A DO214AA

Taiwan Semiconductor Corporation

462 0.60
- +

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ES2B R5G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 25pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 2A -55°C ~ 150°C 950 mV @ 2 A
SS36C

SS36C

SCHOTTKY DIODE SMC 60V 3A

NextGen Components

1035000 0.26
- +

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SS36C

Datenblatt

Tape & Reel (TR) SMC RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 450pF @ 4V, 1MHz - 500 µA @ 60 V 60 V 3A - 700 mV @ 3 A
STB15100TR

STB15100TR

DIODE SCHOTTKY 100V D2PAK

SMC Diode Solutions

160 0.98
- +

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STB15100TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 686pF @ 5V, 1MHz - 500 µA @ 100 V 100 V - -55°C ~ 150°C 750 mV @ 15 A
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