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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
RS1JHE3_A/I

RS1JHE3_A/I

DIODE GEN PURP 600V 1A DO214AC

Vishay General Semiconductor - Diodes Division

2593 0.51
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RS1JHE3_A/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
MBR1060-E3/45

MBR1060-E3/45

DIODE SCHOTTKY 60V 10A TO220AC

Vishay General Semiconductor - Diodes Division

2742 1.10
- +

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MBR1060-E3/45

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 60 V 60 V 10A -65°C ~ 150°C 800 mV @ 10 A
RF305BGE6STL

RF305BGE6STL

SUPER FAST RECOVERY DIODE. RF305

Rohm Semiconductor

3377 1.32
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RF305BGE6STL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 10 µA @ 600 V 600 V 3A 150°C 1.7 V @ 3 A
RB520SM-40T2R

RB520SM-40T2R

DIODE SCHOTTKY 40V 200MA EMD2

Rohm Semiconductor

3613 0.40
- +

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RB520SM-40T2R

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount - - 10 µA @ 40 V 40 V 200mA 150°C (Max) 550 mV @ 100 mA
RB520S-40-TP

RB520S-40-TP

DIODE SCHOTTKY 40V 200MA SOD523

Micro Commercial Co

2657 0.29
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RB520S-40-TP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount - - 10 µA @ 40 V 40 V 200mA 125°C (Max) 550 mV @ 100 mA
V35PW45-M3/I

V35PW45-M3/I

DIODE SCHOTTKY 45V 35A SLIMDPAK

Vishay General Semiconductor - Diodes Division

3154 1.36
- +

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V35PW45-M3/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 4230pF @ 4V, 1MHz - 2.5 mA @ 45 V 45 V 35A -40°C ~ 150°C 620 mV @ 35 A
V2PM12LHM3/H

V2PM12LHM3/H

SCHOTTKY RECTIFIER 2A 120V SMP

Vishay General Semiconductor - Diodes Division

2406 0.49
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V2PM12LHM3/H

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 180pF @ 4V, 1MHz - 200 µA @ 120 V 120 V 1.8A (DC) -40°C ~ 175°C 620 mV @ 1 A
VS-15ETH03-M3

VS-15ETH03-M3

DIODE FRED 300V 15A TO220AC

Vishay General Semiconductor - Diodes Division

3801 1.10
- +

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VS-15ETH03-M3

Datenblatt

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 40 µA @ 300 V 300 V 15A -65°C ~ 175°C 1.25 V @ 15 A
VS-15EVH06-M3/I

VS-15EVH06-M3/I

DIODE GEN PURPOSE 600V SLIMDPAK

Vishay General Semiconductor - Diodes Division

3544 1.26
- +

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VS-15EVH06-M3/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 20 µA @ 600 V 600 V 15A -55°C ~ 175°C 2.1 V @ 15 A
CUS05S40,H3F

CUS05S40,H3F

DIODE SCHOTTKY 40V 500MA USC

Toshiba Semiconductor and Storage

3093 0.35
- +

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CUS05S40,H3F

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 42pF @ 0V, 1MHz - 30 µA @ 10 V 40 V 500mA 125°C (Max) 350 mV @ 100 mA
1N4007GP-TP

1N4007GP-TP

DIODE GEN PURP 1KV 1A DO41

Micro Commercial Co

2315 0.29
- +

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1N4007GP-TP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 2 µs 5 µA @ 1000 V 1000 V 1A -55°C ~ 150°C 1.1 V @ 1 A
V35PWM15-M3/I

V35PWM15-M3/I

DIODE SCHOTTKY 150V 35A SLIMDPAK

Vishay General Semiconductor - Diodes Division

2942 1.36
- +

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V35PWM15-M3/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1620pF @ 4V, 1MHz - 500 µA @ 150 V 150 V 35A -40°C ~ 175°C 1.4 V @ 35 A
S15JLWHRVG

S15JLWHRVG

DIODE GEN PURP 600V 1.5A SOD123W

Taiwan Semiconductor Corporation

3765 0.39
- +

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S15JLWHRVG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 1.5A -55°C ~ 175°C 1.1 V @ 1.5 A
FES8BT-E3/45

FES8BT-E3/45

DIODE GEN PURP 100V 8A TO220AC

Vishay General Semiconductor - Diodes Division

3999 1.12
- +

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FES8BT-E3/45

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 100 V 100 V 8A -55°C ~ 150°C 950 mV @ 8 A
GP30J-E3/54

GP30J-E3/54

DIODE GEN PURP 600V 3A DO201AD

Vishay General Semiconductor - Diodes Division

3530 1.31
- +

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GP30J-E3/54

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 5 µs 5 µA @ 600 V 600 V 3A -65°C ~ 175°C 1.1 V @ 3 A
SBAS16LT1G

SBAS16LT1G

DIODE GP 100V 200MA SOT23-3

onsemi

6000 0.35
- +

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SBAS16LT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 2pF @ 0V, 1MHz 6 ns 1 µA @ 100 V 100 V 200mA (DC) -55°C ~ 150°C 1.25 V @ 150 mA
RB520CM-60T2R

RB520CM-60T2R

DIODE SCHOTTKY 60V 100MA VMN2M

Rohm Semiconductor

6149 0.29
- +

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RB520CM-60T2R

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 3 µA @ 60 V 60 V 100mA 150°C (Max) 440 mV @ 10 mA
V35PW10-M3/I

V35PW10-M3/I

DIODE SCHOTTKY 100V 35A SLIMDPAK

Vishay General Semiconductor - Diodes Division

2698 1.38
- +

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V35PW10-M3/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 2500pF @ 4V, 1MHz - 1 mA @ 100 V 100 V 35A -40°C ~ 150°C 880 mV @ 35 A
SE15PG-M3/84A

SE15PG-M3/84A

DIODE GEN PURP 400V 1.5A DO220AA

Vishay General Semiconductor - Diodes Division

2918 0.39
- +

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SE15PG-M3/84A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9.5pF @ 4V, 1MHz 900 ns 5 µA @ 400 V 400 V 1.5A -55°C ~ 175°C 1.05 V @ 1.5 A
IDV08E65D2XKSA1

IDV08E65D2XKSA1

DIODE GEN PURP 650V 8A TO220-2

Infineon Technologies

3497 1.14
- +

In den Warenkorb

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IDV08E65D2XKSA1

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 40 µA @ 650 V 650 V 8A -40°C ~ 175°C 2.3 V @ 8 A
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