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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
STTH806G-TR

STTH806G-TR

DIODE GEN PURP 600V 8A D2PAK

STMicroelectronics

2804 2.30
- +

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STTH806G-TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 55 ns 8 µA @ 600 V 600 V 8A 175°C (Max) 1.85 V @ 8 A
IDH08G65C5XKSA2

IDH08G65C5XKSA2

DIODE SCHOTTKY 650V 8A TO220-2-1

Infineon Technologies

2063 4.11
- +

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IDH08G65C5XKSA2

Datenblatt

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 250pF @ 1V, 1MHz 0 ns 140 µA @ 650 V 650 V 8A (DC) -55°C ~ 175°C 1.7 V @ 8 A
S2MGF_R1_00001

S2MGF_R1_00001

SURFACE MOUNT RECTIFIER

Panjit International Inc.

3907 0.45
- +

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Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 18pF @ 4V, 1MHz - 1 µA @ 1000 V 1000 V 2A -55°C ~ 150°C 1.1 V @ 2 A
ES1JLW RVG

ES1JLW RVG

DIODE GEN PURP 600V 1A SOD123W

Taiwan Semiconductor Corporation

3343 0.47
- +

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ES1JLW RVG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.7 V @ 1 A
BYG10Y-M3/TR

BYG10Y-M3/TR

DIODE AVALANCHE 1.6KV 1.5A

Vishay General Semiconductor - Diodes Division

2440 0.51
- +

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BYG10Y-M3/TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount - 4 µs 1 µA @ 1600 V 1600 V 1.5A -55°C ~ 150°C 1.15 V @ 1.5 A
GI250-4-E3/54

GI250-4-E3/54

DIODE GEN PURP 4KV 250MA DO204

Vishay General Semiconductor - Diodes Division

2994 0.61
- +

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GI250-4-E3/54

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 3pF @ 4V, 1MHz 2 µs 5 µA @ 4000 V 4000 V 250mA -65°C ~ 175°C 3.5 V @ 250 mA
VS-ETH0806FP-M3

VS-ETH0806FP-M3

DIODE GEN PURP 600V 8A TO220-2

Vishay General Semiconductor - Diodes Division

2940 1.25
- +

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VS-ETH0806FP-M3

Datenblatt

Bulk FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 21 ns 12 µA @ 600 V 600 V 8A -65°C ~ 175°C 2.65 V @ 8 A
STPSC10H065D

STPSC10H065D

DIODE SCHOTTKY 650V 10A TO220AC

STMicroelectronics

3720 4.15
- +

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STPSC10H065D

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 480pF @ 0V, 1MHz 0 ns 100 µA @ 650 V 650 V 10A -40°C ~ 175°C 1.75 V @ 10 A
PMEG100T10ELRX

PMEG100T10ELRX

PMEG100T10ELR/SOD123W/SOD2

Nexperia USA Inc.

3779 0.43
- +

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PMEG100T10ELRX

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 125pF @ 1V, 1MHz 11.5 ns 900 nA @ 100 V 100 V 1A 175°C 750 mV @ 1 A
SS315LW RVG

SS315LW RVG

DIODE SCHOTTKY 150V 3A SOD123W

Taiwan Semiconductor Corporation

2085 0.47
- +

In den Warenkorb

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SS315LW RVG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 10 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
VSSB410S-M3/52T

VSSB410S-M3/52T

DIODE SCHOTTKY 100V 1.9A DO214AA

Vishay General Semiconductor - Diodes Division

3733 0.49
- +

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VSSB410S-M3/52T

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 230pF @ 4V, 1MHz - 250 µA @ 100 V 100 V 1.9A (DC) -40°C ~ 150°C 770 mV @ 4 A
RS3MB-T R5G

RS3MB-T R5G

150NS 3A 1000V FAST RECOVERY REC

Taiwan Semiconductor Corporation

3331 0.51
- +

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RS3MB-T R5G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V 1000 V 3A (DC) -55°C ~ 150°C 1.3 V @ 3 A
STPSC4H065DLF

STPSC4H065DLF

SILICON CARBIDE DIODES

STMicroelectronics

3456 2.32
- +

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STPSC4H065DLF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) ECOPACK®2 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 245pF @ 0V, 1MHz 0 ns 40 µA @ 650 V 650 V 4A -40°C ~ 175°C 1.55 V @ 4 A
STTH3010WY

STTH3010WY

DIODE GEN PURP 1KV 30A DO247-2

STMicroelectronics

3285 4.21
- +

In den Warenkorb

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STTH3010WY

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 15 µA @ 1000 V 1000 V 30A -40°C ~ 175°C 2 V @ 30 A
ES1CWG_R1_00001

ES1CWG_R1_00001

SURFACE MOUNT SUPER FAST RECOVER

Panjit International Inc.

2056 0.45
- +

In den Warenkorb

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Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 1 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
NRVBA340NT3G

NRVBA340NT3G

DIODE SCHOTTKY 3A 40V 1201 SMA2

onsemi

2426 0.44
- +

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NRVBA340NT3G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 40 V 40 V 3A -55°C ~ 150°C 450 mV @ 3 A
S5JHE3_A/I

S5JHE3_A/I

DIODE GEN PURP 600V 5A DO214AB

Vishay General Semiconductor - Diodes Division

3962 0.58
- +

In den Warenkorb

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S5JHE3_A/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 4V, 1MHz 2.5 µs 10 µA @ 600 V 600 V 5A -55°C ~ 150°C 1.15 V @ 5 A
STPS340S

STPS340S

DIODE SCHOTTKY 40V 3A SMC

STMicroelectronics

2534 0.58
- +

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STPS340S

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 20 µA @ 40 V 40 V 3A 150°C (Max) 630 mV @ 3 A
VS-15ETH03S-M3

VS-15ETH03S-M3

DIODE GEN PURP 300V 15A TO263AB

Vishay General Semiconductor - Diodes Division

2782 1.27
- +

In den Warenkorb

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VS-15ETH03S-M3

Datenblatt

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 40 ns 40 µA @ 300 V 300 V 15A -65°C ~ 175°C 1.25 V @ 15 A
SCS220AEGC11

SCS220AEGC11

650V, 20A, 3-PIN THD, SILICON-CA

Rohm Semiconductor

2310 4.42
- +

In den Warenkorb

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SCS220AEGC11

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 730pF @ 1V, 1MHz 0 ns 400 µA @ 600 V 650 V 20A (DC) 175°C 1.55 V @ 20 A
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