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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SF1GDF-13

SF1GDF-13

SUPERFAST RECOVERY RECTIFIER D-F

Diodes Incorporated

2078 0.10
- +

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SF1GDF-13

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
MDO600-16N1

MDO600-16N1

DIODE GEN PURP 1.6KV 608A MODULE

IXYS

2525 144.53
- +

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MDO600-16N1

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount 762pF @ 400V, 1MHz - 30 mA @ 1600 V 1600 V 608A - 1.3 V @ 1200 A
UG2JA M2G

UG2JA M2G

DIODE GEN PURP 600V 2A DO214AC

Taiwan Semiconductor Corporation

2393 0.12
- +

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UG2JA M2G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 55 ns 2 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.3 V @ 2 A
1N4005-G

1N4005-G

DIODE GEN PURP 600V 1A DO41

Comchip Technology

2387 0.03
- +

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1N4005-G

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.1 V @ 1 A
SE30AFB-M3/6B

SE30AFB-M3/6B

DIODE GEN PURP 100V 1.4A DO221AC

Vishay General Semiconductor - Diodes Division

2759 0.12
- +

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SE30AFB-M3/6B

Datenblatt

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 19pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 1.4A (DC) -55°C ~ 175°C 1.1 V @ 3 A
RS2G-M3/52T

RS2G-M3/52T

DIODE GEN PURP 50V 1.5A DO214AA

Vishay General Semiconductor - Diodes Division

2634 0.11
- +

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RS2G-M3/52T

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
1SS250(TE85L,F)

1SS250(TE85L,F)

DIODE GEN PURP 200V 100MA SC59

Toshiba Semiconductor and Storage

2893 0.10
- +

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1SS250(TE85L,F)

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Not For New Designs Surface Mount 3pF @ 0V, 1MHz 60 ns 1 µA @ 200 V 200 V 100mA 125°C (Max) 1.2 V @ 100 mA
NTE6369

NTE6369

R-1400V 250A FAST REC AK

NTE Electronics, Inc

3165 330.62
- +

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NTE6369

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 1 µs 50 mA @ 1400 V 1600 V 250A -40°C ~ 190°C 2 V @ 800 A
SDM1U100S1F-7

SDM1U100S1F-7

DIODE SCHOTTKY 100V 1A SOD123F

Diodes Incorporated

2563 0.12
- +

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SDM1U100S1F-7

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 42pF @ 4V, 1MHz - 150 nA @ 100 V 100 V 1A -55°C ~ 175°C 770 mV @ 1 A
1N4006-G

1N4006-G

DIODE GEN PURP 800V 1A DO41

Comchip Technology

2136 0.03
- +

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1N4006-G

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.1 V @ 1 A
SE30AFD-M3/6B

SE30AFD-M3/6B

DIODE GEN PURP 200V 1.4A DO221AC

Vishay General Semiconductor - Diodes Division

2990 0.12
- +

In den Warenkorb

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SE30AFD-M3/6B

Datenblatt

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 19pF @ 4V, 1MHz 1.5 µs 10 µA @ 200 V 200 V 1.4A (DC) -55°C ~ 175°C 1.1 V @ 3 A
SK315AHM2G

SK315AHM2G

DIODE SCHOTTKY 150V 3A DO214AC

Taiwan Semiconductor Corporation

2544 0.11
- +

In den Warenkorb

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SK315AHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
SL22PL-TP

SL22PL-TP

2A,20V,SCHOTTKY,SOD-123FL PACKAG

Micro Commercial Co

3747 0.46
- +

In den Warenkorb

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SL22PL-TP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1 mA @ 20 V 20 V 2A -55°C ~ 150°C 420 mV @ 2 A
1N4148-T50A

1N4148-T50A

DIODE GEN PURP 100V 200MA DO35

onsemi

3104 0.01
- +

In den Warenkorb

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1N4148-T50A

Datenblatt

Cut Tape (CT),Tape & Box (TB) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 100 V 200mA 175°C (Max) 1 V @ 10 mA
SDM2100S1F-7

SDM2100S1F-7

DIODE SCHOTTKY 100V 2A SOD123F

Diodes Incorporated

2280 0.12
- +

In den Warenkorb

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SDM2100S1F-7

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 42pF @ 4V, 1MHz - 150 nA @ 100 V 100 V 2A -55°C ~ 175°C 830 mV @ 2 A
1N4002T-G

1N4002T-G

DIODE GEN PURP 100V 1A DO41

Comchip Technology

2087 0.03
- +

In den Warenkorb

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1N4002T-G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.1 V @ 1 A
SE30AFG-M3/6B

SE30AFG-M3/6B

DIODE GEN PURP 400V 1.4A DO221AC

Vishay General Semiconductor - Diodes Division

3596 0.12
- +

In den Warenkorb

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SE30AFG-M3/6B

Datenblatt

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 19pF @ 4V, 1MHz 1.5 µs 10 µA @ 400 V 400 V 1.4A (DC) -55°C ~ 175°C 1.1 V @ 3 A
SK320AHM2G

SK320AHM2G

DIODE SCHOTTKY 200V 3A DO214AC

Taiwan Semiconductor Corporation

3720 0.11
- +

In den Warenkorb

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SK320AHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
NRVBS130NT3G

NRVBS130NT3G

DIODE SCHOTTKY 1A 30V SMB2

onsemi

3811 0.10
- +

In den Warenkorb

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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1 mA @ 30 V 30 V 1A -65°C ~ 125°C 600 mV @ 1 A
S1BTR

S1BTR

DIODE GEN PURP 100V 1A SMA

SMC Diode Solutions

3894 0.01
- +

In den Warenkorb

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S1BTR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 2.5 µs 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.1 V @ 1 A
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