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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
TT8J2TR

TT8J2TR

MOSFET 2P-CH 30V 2.5A TSST8

Rohm Semiconductor

2221 1.02
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TT8J2TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active 2 P-Channel (Dual) Logic Level Gate 30V 2.5A 84mOhm @ 2.5A, 10V 2.5V @ 1mA 4.8nC @ 5V 460pF @ 10V 1.25W 150°C (TJ) Surface Mount
SSM6N951L,EFF

SSM6N951L,EFF

SMALL SIGNAL MOSFET RDSON: 4.4MO

Toshiba Semiconductor and Storage

2948 1.03
- +

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Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Common Drain Standard 12V 8A 5.1mOhm @ 8A, 4.5V - - - - - Surface Mount
QH8K26TR

QH8K26TR

QH8K26 IS LOW ON-RESISTANCE AND

Rohm Semiconductor

2075 1.04
- +

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QH8K26TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Standard 40V 7A (Ta) 38mOhm @ 7A, 10V 2.5V @ 1mA 2.9nC @ 5V 275pF @ 20V 1.1W (Ta) 150°C (TJ) Surface Mount
SI5504BDC-T1-GE3

SI5504BDC-T1-GE3

MOSFET N/P-CH 30V 4A 1206-8

Vishay Siliconix

2192 1.05
- +

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SI5504BDC-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N and P-Channel Logic Level Gate 30V 4A, 3.7A 65mOhm @ 3.1A, 10V 3V @ 250µA 7nC @ 10V 220pF @ 15V 3.12W, 3.1W -55°C ~ 150°C (TJ) Surface Mount
SI5504BDC-T1-E3

SI5504BDC-T1-E3

MOSFET N/P-CH 30V 4A 1206-8

Vishay Siliconix

3531 1.05
- +

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SI5504BDC-T1-E3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N and P-Channel Logic Level Gate 30V 4A, 3.7A 65mOhm @ 3.1A, 10V 3V @ 250µA 7nC @ 10V 220pF @ 15V 3.12W, 3.1W -55°C ~ 150°C (TJ) Surface Mount
EFC8811R-TF

EFC8811R-TF

MOSFET 2N-CH 6CSP

onsemi

3429 1.08
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EFC8811R-TF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Common Drain Logic Level Gate, 2.5V Drive - - - - - - 2.5W 150°C (TJ) Surface Mount
SIZ350DT-T1-GE3

SIZ350DT-T1-GE3

MOSFET DUAL N-CHAN 30V POWERPAIR

Vishay Siliconix

2553 1.08
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SIZ350DT-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active 2 N-Channel (Dual) Standard 30V 18.5A (Ta), 30A (Tc) 6.75mOhm @ 15A, 10V 2.4V @ 250µA 20.3nC @ 10V 940pF @ 15V 3.7W (Ta), 16.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AONY36354

AONY36354

30V DUAL ASYMMETRIC N-CHANNEL MO

Alpha & Omega Semiconductor Inc.

2477 1.12
- +

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AONY36354

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Asymmetrical Standard 30V 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc) 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V 2.1V @ 250µA, 1.9V @ 250µA 20nC @ 10V, 40nC @ 10V 820pF @ 15V, 1890pF @ 15V 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIZ342DT-T1-GE3

SIZ342DT-T1-GE3

MOSFET DL N-CH 30V POWERPAIR3X3

Vishay Siliconix

2726 0.97
- +

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SIZ342DT-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) - 30V 15.7A (Ta), 100A (Tc) 11.5mOhm @ 14A, 10V 2.4V @ 250µA 20nC @ 10V 650pF @ 15V 3.6W, 4.3W -55°C ~ 150°C (TJ) Surface Mount
QS8M13TCR

QS8M13TCR

MOSFET N/P-CH 30V 6A/5A TSMT8

Rohm Semiconductor

2198 1.14
- +

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QS8M13TCR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N and P-Channel Logic Level Gate 30V 6A, 5A 28mOhm @ 6A, 10V 2.5V @ 1mA 5.5nC @ 5V 390pF @ 10V 1.5W 150°C (TJ) Surface Mount
QS8J4TR

QS8J4TR

MOSFET 2P-CH 30V 4A TSMT8

Rohm Semiconductor

2812 1.16
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QS8J4TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active 2 P-Channel (Dual) Logic Level Gate 30V 4A 56mOhm @ 4A, 10V 2.5V @ 1mA 13nC @ 10V 800pF @ 10V 550mW 150°C (TJ) Surface Mount
SIZ704DT-T1-GE3

SIZ704DT-T1-GE3

MOSFET 2N-CH 30V 12A PPAK 1212-8

Vishay Siliconix

3466 1.18
- +

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SIZ704DT-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Half Bridge) Logic Level Gate 30V 12A, 16A 24mOhm @ 7.8A, 10V 2.5V @ 250µA 12nC @ 10V 435pF @ 15V 20W, 30W -55°C ~ 150°C (TJ) Surface Mount
SIZF300DT-T1-GE3

SIZF300DT-T1-GE3

MOSFET DUAL N-CHAN 30V PPAIR 3X3

Vishay Siliconix

2895 1.20
- +

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SIZF300DT-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active 2 N-Channel (Dual) Standard 30V 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc) 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V 2.2V @ 250µA 22nC @ 10V, 62nC @ 10V 1100pF @ 15V, 3150pF @ 15V 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7306TRPBF

IRF7306TRPBF

MOSFET 2P-CH 30V 3.6A 8-SOIC

Infineon Technologies

2078 1.06
- +

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IRF7306TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active 2 P-Channel (Dual) Logic Level Gate 30V 3.6A 100mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V 440pF @ 25V 2W -55°C ~ 150°C (TJ) Surface Mount
ZXMHC3A01N8TC

ZXMHC3A01N8TC

MOSFET 2N/2P-CH 30V 8-SOIC

Diodes Incorporated

2761 1.14
- +

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ZXMHC3A01N8TC

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active 2 N and 2 P-Channel (Half Bridge) Logic Level Gate 30V 2.17A, 1.64A 125mOhm @ 2.5A, 10V 3V @ 250µA 3.9nC @ 10V 190pF @ 25V 870mW -55°C ~ 150°C (TJ) Surface Mount
ZXMHC3F381N8TC

ZXMHC3F381N8TC

MOSFET 2N/2P-CH 30V 8-SOIC

Diodes Incorporated

3227 1.14
- +

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ZXMHC3F381N8TC

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active 2 N and 2 P-Channel (Half Bridge) Logic Level Gate 30V 3.98A, 3.36A 33mOhm @ 5A, 10V 3V @ 250µA 9nC @ 10V 430pF @ 15V 870mW -55°C ~ 150°C (TJ) Surface Mount
ZXMHC6A07N8TC

ZXMHC6A07N8TC

MOSFET 2N/2P-CH 60V 8-SOIC

Diodes Incorporated

3855 1.14
- +

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ZXMHC6A07N8TC

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active 2 N and 2 P-Channel (Half Bridge) Logic Level Gate 60V 1.39A, 1.28A 250mOhm @ 1.8A, 10V 3V @ 250µA 3.2nC @ 10V 166pF @ 40V 870mW -55°C ~ 150°C (TJ) Surface Mount
SI6562CDQ-T1-GE3

SI6562CDQ-T1-GE3

MOSFET N/P-CH 20V 6.7A 8-TSSOP

Vishay Siliconix

3594 1.07
- +

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SI6562CDQ-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N and P-Channel Logic Level Gate 20V 6.7A, 6.1A 22mOhm @ 5.7A, 4.5V 1.5V @ 250µA 23nC @ 10V 850pF @ 10V 1.6W, 1.7W -55°C ~ 150°C (TJ) Surface Mount
BSC112N06LDATMA1

BSC112N06LDATMA1

TRENCH 40<-<100V

Infineon Technologies

2406 2.08
- +

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BSC112N06LDATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-T2 Active 2 N-Channel (Dual) Logic Level Gate 60V 20A (Tc) 11.2mOhm @ 17A, 10V 2.2V @ 28µA 55nC @ 10V 4020pF @ 30V 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSS138BKS,115

BSS138BKS,115

MOSFET 2N-CH 60V 0.32A 6TSSOP

Nexperia USA Inc.

2522 0.50
- +

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BSS138BKS,115

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active 2 N-Channel (Dual) Logic Level Gate 60V 320mA 1.6Ohm @ 320mA, 10V 1.6V @ 250µA 0.7nC @ 4.5V 56pF @ 10V 445mW -55°C ~ 150°C (TJ) Surface Mount
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