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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDPF20N50T

FDPF20N50T

MOSFET N-CH 500V 20A TO220F

onsemi

803 3.10
- +

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FDPF20N50T

Datenblatt

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 230mOhm @ 10A, 10V 5V @ 250µA 59.5 nC @ 10 V ±30V 3120 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF24N65M2

STF24N65M2

MOSFET N-CH 650V 16A TO220FP

STMicroelectronics

286 3.11
- +

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STF24N65M2

Datenblatt

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 230mOhm @ 8A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP40010EL-GE3

SUP40010EL-GE3

MOSFET N-CH 40V 120A TO220AB

Vishay Siliconix

3355 3.11
- +

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SUP40010EL-GE3

Datenblatt

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V 2.5V @ 250µA 230 nC @ 10 V ±20V 11155 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDA16N50-F109

FDA16N50-F109

MOSFET N-CH 500V 16.5A TO3PN

onsemi

886 3.14
- +

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FDA16N50-F109

Datenblatt

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 16.5A (Tc) 10V 380mOhm @ 8.3A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 205W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF18N50

FDPF18N50

MOSFET N-CH 500V 18A TO220F

onsemi

11323 3.17
- +

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Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 265mOhm @ 9A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2860 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF16N60

FCPF16N60

MOSFET N-CH 600V 16A TO220F

onsemi

1386 3.17
- +

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FCPF16N60

Datenblatt

Tube SuperFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 260mOhm @ 8A, 10V 5V @ 250µA 70 nC @ 10 V ±30V 2250 pF @ 25 V - 37.9W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF24N60DM2

STF24N60DM2

MOSFET N-CH 600V 18A TO220

STMicroelectronics

774 3.19
- +

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STF24N60DM2

Datenblatt

Tube FDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 200mOhm @ 9A, 10V 5V @ 250µA 29 nC @ 10 V ±25V 1055 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF26N60M2

STF26N60M2

MOSFET N-CH 600V 20A TO220FP

STMicroelectronics

641 3.19
- +

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STF26N60M2

Datenblatt

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 165mOhm @ 11A, 10V 4V @ 250µA - ±25V - - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIZ48GPBF

IRFIZ48GPBF

MOSFET N-CH 60V 37A TO220-3

Vishay Siliconix

691 3.19
- +

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IRFIZ48GPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 37A (Tc) 10V 18mOhm @ 22A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBC30APBF

IRFBC30APBF

MOSFET N-CH 600V 3.6A TO220AB

Vishay Siliconix

1761 3.21
- +

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IRFBC30APBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48SPBF

IRFZ48SPBF

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix

567 3.21
- +

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IRFZ48SPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R385CPXKSA1

IPA60R385CPXKSA1

MOSFET N-CH 600V 9A TO220-FP

Infineon Technologies

230 3.21
- +

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IPA60R385CPXKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP16N60

FCP16N60

MOSFET N-CH 600V 16A TO220-3

onsemi

2998 3.22
- +

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FCP16N60

Datenblatt

Tube SuperFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 260mOhm @ 8A, 10V 5V @ 250µA 70 nC @ 10 V ±30V 2250 pF @ 25 V - 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R180P7XKSA1

IPA60R180P7XKSA1

MOSFET N-CHANNEL 650V 18A TO220

Infineon Technologies

1500 3.24
- +

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IPA60R180P7XKSA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF15N60E-GE3

SIHF15N60E-GE3

MOSFET N-CH 600V 15A TO220

Vishay Siliconix

818 3.24
- +

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SIHF15N60E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA80R360P7XKSA1

IPA80R360P7XKSA1

MOSFET N-CHANNEL 800V 13A TO220

Infineon Technologies

500 3.25
- +

In den Warenkorb

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IPA80R360P7XKSA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 360mOhm @ 5.6A, 10V 3.5V @ 280µA 30 nC @ 10 V ±20V 930 pF @ 500 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP3672

FDP3672

MOSFET N-CH 105V 5.9A/41A TO220

onsemi

2400 2.25
- +

In den Warenkorb

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FDP3672

Datenblatt

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 105 V 5.9A (Ta), 41A (Tc) 6V, 10V 33mOhm @ 41A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 1670 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSJP11N65-BP

MSJP11N65-BP

MOSFET N-CH 650V 11A TO220AB

Micro Commercial Co

4926 3.28
- +

In den Warenkorb

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MSJP11N65-BP

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 901 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPAN60R125PFD7SXKSA1

IPAN60R125PFD7SXKSA1

MOSFET N-CH 650V 25A TO220

Infineon Technologies

5203 3.29
- +

In den Warenkorb

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Tube CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 32W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRFIB7N50APBF

IRFIB7N50APBF

MOSFET N-CH 500V 6.6A TO220-3

Vishay Siliconix

953 3.29
- +

In den Warenkorb

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IRFIB7N50APBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 6.6A (Tc) 10V 520mOhm @ 4A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
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