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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RJK0380DPA-WS#J53

RJK0380DPA-WS#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc

320 1.16
- +

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HAT2201WP-EL-E

HAT2201WP-EL-E

15A, 100V, N-CHANNEL MOSFET

Renesas Electronics America Inc

2500 1.17
- +

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HAT2201WP-EL-E

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Ta) - 43mOhm @ 7.5A, 10V - 21 nC @ 10 V - 1450 pF @ 10 V - - 150°C (TJ) Surface Mount
IPA040N06NM5SXKSA1

IPA040N06NM5SXKSA1

MOSFET N-CH 60V 72A TO220

Infineon Technologies

495 2.16
- +

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IPA040N06NM5SXKSA1

Datenblatt

Tube OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 60 V 72A (Tc) 6V, 10V 4mOhm @ 72A, 10V 3.3V @ 50µA 50 nC @ 10 V ±20V 3500 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1335-90L

2SK1335-90L

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

1970 1.18
- +

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UPA2803T1L-E2-AY

UPA2803T1L-E2-AY

MOSFET N-CH 20V 20A 8DFN

Renesas Electronics America Inc

9000 1.19
- +

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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 20A (Ta) - 5.8mOhm @ 20A, 4.5V 1.5V @ 1mA 20 nC @ 4 V - 2450 pF @ 10 V - - - Surface Mount
NTD6N40-001

NTD6N40-001

NFET DPAK 400V 1.1R

onsemi

6300 1.19
- +

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RJK03P6DPA-WS#J5A

RJK03P6DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2750 1.19
- +

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RJK0226DNS-WS#J5

RJK0226DNS-WS#J5

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2600 1.19
- +

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RJK03M0DPA-WS#J5A

RJK03M0DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

1120 1.19
- +

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NTD6N40-001-MO

NTD6N40-001-MO

NFET DPAK 400V 1.1R

Motorola

400 1.19
- +

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AUIRF3007

AUIRF3007

MOSFET N-CH 75V 75A TO220AB

International Rectifier

9800 1.20
- +

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AUIRF3007

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI60R299CP

IPI60R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies

8500 1.20
- +

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IPI60R299CP

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP055N08NF2SAKMA1

IPP055N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies

607 2.24
- +

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IPP055N08NF2SAKMA1

Datenblatt

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 80 V 18.5A (Ta), 99A (Tc) 6V, 10V 5.5mOhm @ 60A, 10V 3.8V @ 55µA 54 nC @ 10 V ±20V 2500 pF @ 40 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF13N50C-ON

FQPF13N50C-ON

MOSFET N-CH 500V 13A TO220-3

onsemi

6476 1.20
- +

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FQPF13N50C-ON

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) - 480mOhm @ 6.5A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTB6N60T4

NTB6N60T4

N-CHANNEL POWER MOSFET

Motorola

6400 1.20
- +

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NTB6N60T4

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
TK3R3E08QM,S1X

TK3R3E08QM,S1X

UMOS10 TO-220AB 80V 3.3MOHM

Toshiba Semiconductor and Storage

3433 2.24
- +

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TK3R3E08QM,S1X

Datenblatt

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.3mOhm @ 50A, 10V 3.5V @ 1.3mA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 230W (Tc) 175°C Through Hole
RF1S9640

RF1S9640

MOSFET P-CH 200V 11A TO220AB

Harris Corporation

4500 1.20
- +

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RF1S9640

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) - 500mOhm @ 6A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF831

IRF831

N-CHANNEL POWER MOSFET

Harris Corporation

1610 1.20
- +

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IRF831

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 4.5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB70N08TM

FQB70N08TM

MOSFET N-CH 80V 70A D2PAK

Fairchild Semiconductor

1180 1.20
- +

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FQB70N08TM

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 10V 17mOhm @ 35A, 10V 4V @ 250µA 98 nC @ 10 V ±25V 2700 pF @ 25 V - 3.75W (Ta), 155W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPIC5302D

TPIC5302D

N-CHANNEL POWER MOSFET

Texas Instruments

969 1.20
- +

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TPIC5302D

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
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