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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STF13N60M2

STF13N60M2

MOSFET N-CH 600V 11A TO220FP

STMicroelectronics

944 1.97
- +

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STF13N60M2

Datenblatt

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 580 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF2807PBF

IRF2807PBF

MOSFET N-CH 75V 82A TO220AB

Infineon Technologies

5621 1.98
- +

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IRF2807PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB7440PBF

IRFB7440PBF

MOSFET N-CH 40V 120A TO220AB

Infineon Technologies

1306 1.98
- +

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IRFB7440PBF

Datenblatt

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.9V @ 100µA 135 nC @ 10 V ±20V 4730 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU9020PBF

IRFU9020PBF

MOSFET P-CH 50V 9.9A TO251AA

Vishay Siliconix

1103 1.98
- +

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IRFU9020PBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ20PBF

IRFZ20PBF

MOSFET N-CH 50V 15A TO220AB

Vishay Siliconix

1821 1.99
- +

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IRFZ20PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 15A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 850 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF840APBF

IRF840APBF

MOSFET N-CH 500V 8A TO220AB

Vishay Siliconix

23265 2.03
- +

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IRF840APBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF11N60DM2

STF11N60DM2

MOSFET N-CH 600V 10A TO220FP

STMicroelectronics

3000 2.03
- +

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STF11N60DM2

Datenblatt

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 420mOhm @ 5A, 10V 5V @ 250µA 16.5 nC @ 10 V ±25V 614 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z24PBF

IRF9Z24PBF

MOSFET P-CH 60V 11A TO220AB

Vishay Siliconix

1455 2.03
- +

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IRF9Z24PBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 10V 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ34PBF

IRLZ34PBF

MOSFET N-CH 60V 30A TO220AB

Vishay Siliconix

1004 2.03
- +

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IRLZ34PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOB66613L

AOB66613L

MOSFET N-CH 60V 44.5A/120A TO263

Alpha & Omega Semiconductor Inc.

2158 3.26
- +

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Tape & Reel (TR),Cut Tape (CT) AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 60 V 44.5A (Ta), 120A (Tc) 8V, 10V 2.5mOhm @ 20A, 10V 3.5V @ 250µA 110 nC @ 10 V ±20V 5300 pF @ 30 V - 8.3W (Ta), 260W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z34SPBF

IRF9Z34SPBF

MOSFET P-CH 60V 18A D2PAK

Vishay Siliconix

925 2.09
- +

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IRF9Z34SPBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP4N80

FQP4N80

MOSFET N-CH 800V 3.9A TO220-3

onsemi

1227 2.10
- +

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FQP4N80

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 3.6Ohm @ 1.95A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 880 pF @ 25 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM680P06CH X0G

TSM680P06CH X0G

MOSFET P-CHANNEL 60V 18A TO251

Taiwan Semiconductor Corporation

15800 2.11
- +

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TSM680P06CH X0G

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 68mOhm @ 6A, 10V 2.2V @ 250µA 16.4 nC @ 10 V ±20V 870 pF @ 30 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU3110ZPBF

IRLU3110ZPBF

MOSFET N-CH 100V 42A IPAK

Infineon Technologies

5165 2.11
- +

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IRLU3110ZPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9640PBF

IRF9640PBF

MOSFET P-CH 200V 11A TO220AB

Vishay Siliconix

8137 2.14
- +

In den Warenkorb

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IRF9640PBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF740PBF

IRF740PBF

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix

1018 2.14
- +

In den Warenkorb

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IRF740PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD11NM65N

STD11NM65N

MOSFET N CH 650V 11A DPAK

STMicroelectronics

6673 3.60
- +

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STD11NM65N

Datenblatt

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 455mOhm @ 5.5A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 800 pF @ 50 V - 110W (Tc) 150°C (TJ) Surface Mount
CSD16401Q5T

CSD16401Q5T

MOSFET N-CH 25V 100A 8VSON

Texas Instruments

605 3.10
- +

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CSD16401Q5T

Datenblatt

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Ta) 4.5V, 10V 1.6mOhm @ 40A, 10V 1.9V @ 250µA 29 nC @ 4.5 V +16V, -12V 4100 pF @ 12.5 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFI1310NPBF

IRFI1310NPBF

MOSFET N-CH 100V 24A TO220AB FP

Infineon Technologies

1228 2.17
- +

In den Warenkorb

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IRFI1310NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 24A (Tc) 10V 36mOhm @ 13A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 1900 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP33N25

FDP33N25

MOSFET N-CH 250V 33A TO220-3

onsemi

4723 2.18
- +

In den Warenkorb

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FDP33N25

Datenblatt

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Tc) 10V 94mOhm @ 16.5A, 10V 5V @ 250µA 48 nC @ 10 V ±30V 2135 pF @ 25 V - 235W (Tc) -55°C ~ 150°C (TJ) Through Hole
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