Foto | Mfr. Teil # | Lagerbestand | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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TSM4NC50CP ROGMOSFET N-CHANNEL 500V 4A TO252 |
9895 | 1.95 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4A (Tc) | 10V | 2.7Ohm @ 1.7A, 10V | 3V @ 250µA | 12 nC @ 10 V | ±20V | 453 pF @ 50 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
CSD17313Q2Q1TMOSFET N-CH 30V 5A 6WSON |
2250 | 0.95 |
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Datenblatt |
Tape & Reel (TR) | NexFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 3V, 8V | 30mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7 nC @ 4.5 V | +10V, -8V | 340 pF @ 15 V | - | 2.4W (Ta), 17W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IPSA70R900P7SAKMA1MOSFET N-CH 700V 6A TO251-3 |
1488 | 0.97 |
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Datenblatt |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8 nC @ 400 V | ±16V | 211 pF @ 400 V | - | 30.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | |
IPS70R900P7SAKMA1MOSFET N-CH 700V 6A TO251-3 |
1107 | 0.97 |
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Datenblatt |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8 nC @ 10 V | ±16V | 211 pF @ 400 V | - | 30.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | |
IRFR110PBFMOSFET N-CH 100V 4.3A DPAK |
1235 | 1.05 |
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Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
NTMFS006N08MCMOSFET N-CH 80V 9.3A/82A 8PQFN |
3011 | 2.31 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 9.3A (Ta), 82A (Tc) | 6V, 10V | 6mOhm @ 32A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 2300 pF @ 40 V | - | 1W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SIR440DP-T1-GE3MOSFET N-CH 20V 60A PPAK SO-8 |
9978 | 2.11 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 4.5V, 10V | 1.55mOhm @ 20A, 10V | 2.5V @ 250µA | 150 nC @ 10 V | ±20V | 6000 pF @ 10 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IPU80R4K5P7AKMA1MOSFET N-CH 800V 1.5A TO251-3 |
2122 | 1.08 |
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Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.5A (Tc) | 10V | 4.5Ohm @ 400mA, 10V | 3.5V @ 200µA | 4 nC @ 10 V | ±20V | 250 pF @ 500 V | Super Junction | 13W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPD80R600P7ATMA1MOSFET N-CH 800V 8A TO252-3 |
9642 | 2.19 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20 nC @ 10 V | ±20V | 570 pF @ 500 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
BSC0803LSATMA1MOSFET N-CH 100V 10A/44A TDSON-6 |
4745 | 1.78 |
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Datenblatt |
Cut Tape (CT) | OptiMOS™ 5 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Ta), 44A (Tc) | 4.5V, 10V | 14.6mOhm @ 22A, 10V | 2.3V @ 23µA | 10 nC @ 4.5 V | ±20V | 1300 pF @ 50 V | - | 2.5W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SI4124DY-T1-GE3MOSFET N-CH 40V 20.5A 8SO |
4191 | 2.17 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20.5A (Tc) | 4.5V, 10V | 7.5mOhm @ 14A, 10V | 3V @ 250µA | 77 nC @ 10 V | ±20V | 3540 pF @ 20 V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRFU120PBFMOSFET N-CH 100V 7.7A TO251AA |
2980 | 1.11 |
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Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.7A (Tc) | 10V | 270mOhm @ 4.6A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STD2NC45-1MOSFET N-CH 450V 1.5A IPAK |
1059 | 1.14 |
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Datenblatt |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 1.5A (Tc) | 10V | 4.5Ohm @ 500mA, 10V | 3.7V @ 250µA | 7 nC @ 10 V | ±30V | 160 pF @ 25 V | - | 30W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | |
PSMN2R7-30BL,118MOSFET N-CH 30V 100A D2PAK |
2649 | 1.94 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 3mOhm @ 25A, 10V | 2.15V @ 1mA | 66 nC @ 10 V | ±20V | 3954 pF @ 15 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRFR9014PBFMOSFET P-CH 60V 5.1A DPAK |
2985 | 1.16 |
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Datenblatt |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
RS1E321GNTB1MOSFET N-CH 30V 32A/80A 8HSOP |
4990 | 2.52 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 80A (Tc) | 4.5V, 10V | 2.1mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8 nC @ 10 V | ±20V | 2850 pF @ 15 V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | |
MCB85N06Y-TPMOSFET N-CH 60V 85A D2PAK |
30104 | 1.99 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 85A (Tc) | 10V | 13mOhm @ 30A, 10V | 2.4V @ 250µA | 36 nC @ 10 V | ±20V | 2498 pF @ 25 V | - | 85W | -55°C ~ 175°C (TJ) | Surface Mount | |
STP3NK50ZMOSFET N-CH 500V 2.3A TO220AB |
8306 | 0.84 |
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Datenblatt |
Tube | SuperMESH™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.3A (Tc) | 10V | 3.3Ohm @ 1.15A, 10V | 4.5V @ 50µA | 15 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFH5007TRPBFMOSFET N-CH 75V 17A/100A 8PQFN |
12000 | 2.42 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 17A (Ta), 100A (Tc) | 10V | 5.9mOhm @ 50A, 10V | 4V @ 150µA | 98 nC @ 10 V | ±20V | 4290 pF @ 25 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRFR210PBFMOSFET N-CH 200V 2.6A DPAK |
2970 | 1.23 |
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Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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