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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RJP63G4DPE-00#J3

RJP63G4DPE-00#J3

N CH IGBT

Renesas Electronics America Inc

3338 2.61
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IRGP4262DPBF

IRGP4262DPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier

3731 2.63
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IRGP4262DPBF

Datenblatt

Bulk - Active - 650 V 60 A 96 A 2.1V @ 15V, 24A 250 W 520µJ (on), 240µJ (off) Standard 70 nC 24ns/73ns 400V, 24A, 10Ohm, 15V 170 ns -40°C ~ 175°C (TJ) Through Hole
IKWH20N65WR6XKSA1

IKWH20N65WR6XKSA1

IGBT TRENCH

Infineon Technologies

205 3.20
- +

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Tube Trenchstop™ 5 Active Trench Field Stop 650 V 55 A 60 A 1.7V @ 15V, 20A 136 W - Standard 97 nC - - - -40°C ~ 175°C (TJ) Through Hole
IRGP4760-EPBF

IRGP4760-EPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier

2640 2.64
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IRGP4760-EPBF

Datenblatt

Bulk - Active - 650 V 90 A 144 A 2V @ 15V, 48A 325 W 1.7mJ (on), 1mJ (off) Standard 145 nC 70ns/140ns 400V, 48A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IRG7PG35U-EPBF

IRG7PG35U-EPBF

IGBT

International Rectifier

2009 2.64
- +

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IRG7PG35U-EPBF

Datenblatt

Bulk - Active Trench 1000 V 55 A 60 A 2.2V @ 15V, 20A 210 W 1.06mJ (on), 620µJ (off) Standard 85 nC 30ns/160ns 600V, 20A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
AIGB50N65F5ATMA1

AIGB50N65F5ATMA1

DISCRETE SWITCHES

Infineon Technologies

2125 5.65
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AIGB50N65F5ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active NPT 650 V 50 A - - - - Standard - - - - - Surface Mount
IRG7PH35UD1PBF

IRG7PH35UD1PBF

IGBT W/ULTRA-LOW VF DIODE FOR IN

International Rectifier

2599 2.68
- +

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IRG7PH35UD1PBF

Datenblatt

Bulk - Active Trench 1200 V 50 A 150 A 2.2V @ 15V, 20A 179 W 620µJ (off) Standard 130 nC -/160ns 600V, 20A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
RJP6065DPN-P1#T2

RJP6065DPN-P1#T2

IGBT

Renesas Electronics America Inc

2621 2.69
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IXYX110N120A4

IXYX110N120A4

IGBT 1200V 110A GNX4 XPT PLUS247

IXYS

3737 37.22
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IXYX110N120A4

Datenblatt

Tube XPT™, GenX4™ Active PT 1200 V 375 A 900 A 1.8V @ 15V, 110A 1360 W 2.5mJ (on), 8.4mJ (off) Standard 305 nC 42ns/550ns 600V, 50A, 1.5Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXYK110N120A4

IXYK110N120A4

IGBT 1200V 110A GENX4 XPT TO-264

IXYS

2119 37.22
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IXYK110N120A4

Datenblatt

Tube XPT™, GenX4™ Active PT 1200 V 375 A 900 A 1.8V @ 15V, 110A 1360 W 2.5mJ (on), 8.4mJ (off) Standard 305 nC 42ns/550ns 600V, 50A, 1.5Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXBT14N300HV

IXBT14N300HV

REVERSE CONDUCTING IGBT

IXYS

2025 45.96
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Tube BIMOSFET™ Active - 3000 V 38 A 120 A 2.7V @ 15V, 14A 200 W - Standard 62 nC - 960V, 14A, 20Ohm, 15V 1.4 µs -55°C ~ 150°C (TJ) Surface Mount
IXA70R1200NA

IXA70R1200NA

DISC IGBT XPT-GENX3 SOT-227B(MIN

IXYS

3894 27.00
- +

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Tube XPT™ Active PT 1200 V 100 A - 2.1V @ 15V, 50A 350 W 4.5mJ (on), 5.5mJ (off) Standard 190 nC 70ns/250ns 600V, 50A, 15Ohm, 15V - - Chassis Mount
IRGP4760PBF

IRGP4760PBF

IGBT WITH RECOVERY DIODE

International Rectifier

3306 2.72
- +

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IRGP4760PBF

Datenblatt

Tube - Obsolete - 650 V 90 A 144 A 2V @ 15V, 48A 325 W 1.7mJ (on), 1mJ (off) Standard 145 nC 70ns/140ns 400V, 48A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IRG7PK35UD1-EPBF

IRG7PK35UD1-EPBF

IGBT WITH ULTRAFAST SOFT RECOVER

International Rectifier

2666 2.72
- +

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IRG7PK35UD1-EPBF

Datenblatt

Bulk - Active - 1400 V 40 A 200 A 2.35V @ 15V, 20A 167 W 650µJ (off) Standard 98 nC -/150ns 600V, 20A, 10Ohm, 15V - -40°C ~ 150°C (TJ) Through Hole
RJP3043DPK-80#T2

RJP3043DPK-80#T2

HIGH SPEED IGBT

Renesas Electronics America Inc

3413 2.74
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IRG7PH35UD1MPBF

IRG7PH35UD1MPBF

IGBT W/ULTRA-LOW VF DIODE FOR IN

International Rectifier

3067 2.75
- +

In den Warenkorb

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IRG7PH35UD1MPBF

Datenblatt

Bulk - Active Trench 1200 V 50 A 150 A 2.2V @ 15V, 20A 179 W 620µJ (off) Standard 130 nC -/160ns 600V, 20A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IKWH30N65WR6XKSA1

IKWH30N65WR6XKSA1

IGBT TRENCH

Infineon Technologies

224 3.43
- +

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Tube Trenchstop™ 5 Active Trench Field Stop 650 V 67 A 90 A 1.75V @ 15V, 30A 136 W - Standard 97 nC - - - -40°C ~ 175°C (TJ) Through Hole
RJP43F4ADPP-MB#T2F

RJP43F4ADPP-MB#T2F

IGBT 430V, 40A FOR PLASMA TV

Renesas Electronics America Inc

3096 2.77
- +

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IRGP4263PBF

IRGP4263PBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier

2278 2.79
- +

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IRGP4263PBF

Datenblatt

Bulk - Active - 650 V 90 A 192 A 2.1V @ 15V, 48A 300 W 1.7mJ (on), 1mJ (off) Standard 150 nC 70ns/140ns 400V, 48A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RJP30E3DPP-M0#T2

RJP30E3DPP-M0#T2

IGBT

Renesas Electronics America Inc

2103 2.83
- +

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RJP30E3DPP-M0#T2

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
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