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| Foto | Mfr. Teil # | Lagerbestand | Preis | Menge | Datenblatt | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIDC06D60F6X1SA2DIODE SWITCHING 600V WAFER |
2356 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 15A (DC) | -40°C ~ 175°C | 1.6 V @ 15 A | |||
|
MUR4L40HA0GDIODE GEN PURP 400V 4A DO201AD |
2689 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 175°C | 1.28 V @ 4 A | ||
|
|
SIDC06D60E6X1SA1DIODE SWITCHING 600V WAFER |
2378 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 150°C | 1.25 V @ 10 A | |||
|
|
MUR4L60 A0GDIODE GEN PURP 600V 4A DO201AD |
3821 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 175°C | 1.28 V @ 4 A | |||
|
|
SIDC14D60E6X1SA4DIODE SWITCHING 600V WAFER |
3974 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 30A (DC) | -55°C ~ 150°C | 1.25 V @ 30 A | |||
|
|
MUR4L60HA0GDIODE GEN PURP 600V 4A DO201AD |
2404 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 175°C | 1.28 V @ 4 A | ||
|
|
SIDC09D60E6X1SA3DIODE SWITCHING 600V WAFER |
2100 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 150 ns | 27 µA @ 600 V | 600 V | 20A (DC) | -55°C ~ 150°C | 1.7 V @ 20 A | |||
|
|
P2500M A0GDIODE GEN PURP 1000V 25A P2500 |
3288 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 1000 V | - | 25A | -50°C ~ 175°C | 870 mV @ 5 A | |||
|
|
SIDC14D60E6X1SA3DIODE SWITCHING 600V WAFER |
2138 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 30A (DC) | -55°C ~ 150°C | 1.25 V @ 30 A | |||
|
|
P2500MHA0GDIODE GEN PURP 25A P2500 |
2829 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 1000 V | - | 25A | -50°C ~ 175°C | 870 mV @ 5 A | ||
|
|
SIDC06D60E6X1SA4DIODE SWITCHING 600V WAFER |
3729 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 150°C | 1.25 V @ 10 A | |||
|
SF21G A0GDIODE GEN PURP 50V 2A DO204AC |
2160 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |||
|
|
SIDC02D60C8X7SA2DIODE SWITCHING 600V 6A WAFER |
3611 | 0.00 |
In den WarenkorbJetzt anfragen |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 6A (DC) | -40°C ~ 175°C | 1.95 V @ 6 A | ||||
|
|
SF21GHA0GDIODE GEN PURP 50V 2A DO204AC |
3575 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | ||
|
|
SIDC09D60F6X1SA5DIODE SWITCHING 600V WAFER |
3043 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 30A (DC) | -40°C ~ 175°C | 1.6 V @ 30 A | |||
|
|
SF22G A0GDIODE GEN PURP 100V 2A DO204AC |
2491 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |||
|
|
SIDC04D60F6X1SA2DIODE SWITCHING 600V WAFER |
3327 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 9A (DC) | -40°C ~ 175°C | 1.6 V @ 9 A | |||
|
|
SF22GHA0GDIODE GEN PURP 100V 2A DO204AC |
3159 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | ||
|
|
SIDC14D60C8X1SA3DIODE GEN PURP 600V 50A WAFER |
3817 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 50A (DC) | -40°C ~ 175°C | 1.9 V @ 50 A | |||
|
|
SF23G A0GDIODE GEN PURP 150V 2A DO204AC |
3607 | 0.00 |
In den WarenkorbJetzt anfragen |
Datenblatt |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
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