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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SIDC05D60C8X1SA1

SIDC05D60C8X1SA1

DIODE GEN PURP 600V 15A WAFER

Infineon Technologies

2582 0.00
- +

In den Warenkorb

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SIDC05D60C8X1SA1

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 15A (DC) -40°C ~ 175°C 1.95 V @ 15 A
SF23GHA0G

SF23GHA0G

DIODE GEN PURP 150V 2A DO204AC

Taiwan Semiconductor Corporation

2091 0.00
- +

In den Warenkorb

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SF23GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 2A -55°C ~ 150°C 950 mV @ 2 A
SIDC23D60E6X1SA1

SIDC23D60E6X1SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

2707 0.00
- +

In den Warenkorb

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SIDC23D60E6X1SA1

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 50A (DC) -55°C ~ 150°C 1.25 V @ 50 A
SF24GHA0G

SF24GHA0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

3262 0.00
- +

In den Warenkorb

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SF24GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
SIDC38D60C8X1SA1

SIDC38D60C8X1SA1

DIODE GEN PURP 600V 150A WAFER

Infineon Technologies

2190 0.00
- +

In den Warenkorb

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SIDC38D60C8X1SA1

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 150A (DC) -40°C ~ 150°C 1.9 V @ 150 A
SF25G A0G

SF25G A0G

DIODE GEN PURP 300V 2A DO204AC

Taiwan Semiconductor Corporation

3162 0.00
- +

In den Warenkorb

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SF25G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SIDC23D60E6X1SA5

SIDC23D60E6X1SA5

DIODE SWITCHING 600V WAFER

Infineon Technologies

3242 0.00
- +

In den Warenkorb

Jetzt anfragen

SIDC23D60E6X1SA5

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 50A (DC) -55°C ~ 150°C 1.25 V @ 50 A
SF25GHA0G

SF25GHA0G

DIODE GEN PURP 300V 2A DO204AC

Taiwan Semiconductor Corporation

2725 0.00
- +

In den Warenkorb

Jetzt anfragen

SF25GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SIDC07D60F6X1SA5

SIDC07D60F6X1SA5

DIODE SWITCHING 600V WAFER

Infineon Technologies

3896 0.00
- +

In den Warenkorb

Jetzt anfragen

SIDC07D60F6X1SA5

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 22.5A (DC) -40°C ~ 175°C 1.6 V @ 22.5 A
SF26GHA0G

SF26GHA0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

3307 0.00
- +

In den Warenkorb

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SF26GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SIDC07D60F6X7SA1

SIDC07D60F6X7SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

2847 0.00
- +

In den Warenkorb

Jetzt anfragen

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 22.5A (DC) -40°C ~ 175°C 1.6 V @ 22.5 A
SF27G A0G

SF27G A0G

DIODE GEN PURP 500V 2A DO204AC

Taiwan Semiconductor Corporation

2315 0.00
- +

In den Warenkorb

Jetzt anfragen

SF27G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SIDC14D60F6X1SA3

SIDC14D60F6X1SA3

DIODE SWITCHING 600V WAFER

Infineon Technologies

3032 0.00
- +

In den Warenkorb

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SIDC14D60F6X1SA3

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 45A (DC) -40°C ~ 175°C 1.6 V @ 45 A
SF27GHA0G

SF27GHA0G

DIODE GEN PURP 500V 2A DO204AC

Taiwan Semiconductor Corporation

2218 0.00
- +

In den Warenkorb

Jetzt anfragen

SF27GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SIDC26D60C8X1SA1

SIDC26D60C8X1SA1

DIODE GEN PURP 600V 100A WAFER

Infineon Technologies

3992 0.00
- +

In den Warenkorb

Jetzt anfragen

SIDC26D60C8X1SA1

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 100A (DC) -40°C ~ 175°C 1.9 V @ 100 A
SF28GHA0G

SF28GHA0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

3306 0.00
- +

In den Warenkorb

Jetzt anfragen

SF28GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SIDC08D60C8X1SA1

SIDC08D60C8X1SA1

DIODE GEN PURP 600V 30A WAFER

Infineon Technologies

2554 0.00
- +

In den Warenkorb

Jetzt anfragen

SIDC08D60C8X1SA1

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -40°C ~ 175°C 1.95 V @ 30 A
SF2L4G A0G

SF2L4G A0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

2852 0.00
- +

In den Warenkorb

Jetzt anfragen

SF2L4G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 1 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
SIDC04D60F6X1SA4

SIDC04D60F6X1SA4

DIODE SWITCHING 600V WAFER

Infineon Technologies

2597 0.00
- +

In den Warenkorb

Jetzt anfragen

SIDC04D60F6X1SA4

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 9A (DC) -40°C ~ 175°C 1.6 V @ 9 A
SF2L4GHA0G

SF2L4GHA0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

2431 0.00
- +

In den Warenkorb

Jetzt anfragen

SF2L4GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 1 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
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