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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
MAX4420EPA+

MAX4420EPA+

IC GATE DRVR LOW-SIDE 8DIP

Analog Devices Inc./Maxim Integrated

3869 4.45
- +

In den Warenkorb

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MAX4420EPA+

Datenblatt

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 6A, 6A Non-Inverting - 25ns, 25ns -40°C ~ 85°C (TA) Through Hole
LM5101CMA/NOPB

LM5101CMA/NOPB

IC GATE DRVR HALF-BRIDGE 8SOIC

Texas Instruments

523 4.45
- +

In den Warenkorb

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LM5101CMA/NOPB

Datenblatt

Tube - Active Half-Bridge Independent 2 N-Channel MOSFET 9V ~ 14V 2.3V, - 1A, 1A Non-Inverting 118 V 990ns, 715ns -40°C ~ 125°C (TJ) Surface Mount
LM5100AMR/NOPB

LM5100AMR/NOPB

IC GATE DRVR HALF-BRIDGE 8SOPWR

Texas Instruments

200 4.45
- +

In den Warenkorb

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LM5100AMR/NOPB

Datenblatt

Tube - Active Half-Bridge Independent 2 N-Channel MOSFET 9V ~ 14V 2.3V, - 3A, 3A Non-Inverting 118 V 430ns, 260ns -40°C ~ 125°C (TJ) Surface Mount
ICL7667EBA+

ICL7667EBA+

IC GATE DRVR HALF-BRIDGE 8SOIC

Analog Devices Inc./Maxim Integrated

170 4.45
- +

In den Warenkorb

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ICL7667EBA+

Datenblatt

Tube - Active - Independent 2 N-Channel MOSFET 4.5V ~ 17V 0.8V, 2V - Inverting - 20ns, 20ns 0°C ~ 150°C (TJ) Surface Mount
TC4421ESM

TC4421ESM

IC GATE DRVR LOW-SIDE 8SOIJ

Microchip Technology

161 4.49
- +

In den Warenkorb

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TC4421ESM

Datenblatt

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 9A, 9A Inverting - 60ns, 60ns -40°C ~ 150°C (TJ) Surface Mount
MAX15025AATB+T

MAX15025AATB+T

IC GATE DRVR LOW-SIDE 10TDFN

Analog Devices Inc./Maxim Integrated

3346 7.31
- +

In den Warenkorb

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MAX15025AATB+T

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Active Low-Side Independent 2 N-Channel MOSFET 4.5V ~ 28V 0.8V, 2V 2A, 4A Non-Inverting - 42ns, 30ns -40°C ~ 150°C (TJ) Surface Mount
ISL78420AVEZ

ISL78420AVEZ

IC GATE DRVR HALF-BRIDG 14HTSSOP

Renesas Electronics America Inc

2595 4.66
- +

In den Warenkorb

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ISL78420AVEZ

Datenblatt

Tube Automotive, AEC-Q100 Active Half-Bridge Synchronous 2 N-Channel MOSFET 8V ~ 14V 1.8V, 4V 2A, 2A Non-Inverting 114 V 10ns, 10ns -40°C ~ 125°C (TA) Surface Mount
IRS21864PBF

IRS21864PBF

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies

405 4.81
- +

In den Warenkorb

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IRS21864PBF

Datenblatt

Tube - Not For New Designs High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 4A, 4A Non-Inverting 600 V 22ns, 18ns -40°C ~ 150°C (TJ) Through Hole
IR2109PBF

IR2109PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

670 5.02
- +

In den Warenkorb

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IR2109PBF

Datenblatt

Tube - Not For New Designs Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
TC4421CAT

TC4421CAT

IC GATE DRVR LOW-SIDE TO220-5

Microchip Technology

207 5.02
- +

In den Warenkorb

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TC4421CAT

Datenblatt

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 9A, 9A Inverting - 60ns, 60ns 0°C ~ 150°C (TJ) Through Hole
TC4422CAT

TC4422CAT

IC GATE DRVR LOW-SIDE TO220-5

Microchip Technology

200 5.02
- +

In den Warenkorb

Jetzt anfragen

TC4422CAT

Datenblatt

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 9A, 9A Non-Inverting - 60ns, 60ns 0°C ~ 150°C (TJ) Through Hole
MIC4467YWM

MIC4467YWM

IC GATE DRVR LOW-SIDE 16SOIC

Microchip Technology

188 5.10
- +

In den Warenkorb

Jetzt anfragen

MIC4467YWM

Datenblatt

Tube - Active Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Inverting - 14ns, 13ns -40°C ~ 85°C (TA) Surface Mount
MAX4429ESA+

MAX4429ESA+

IC GATE DRVR LOW-SIDE 8SOIC

Analog Devices Inc./Maxim Integrated

319 5.11
- +

In den Warenkorb

Jetzt anfragen

MAX4429ESA+

Datenblatt

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 6A, 6A Inverting - 25ns, 25ns -40°C ~ 85°C (TA) Surface Mount
MIC4469YN

MIC4469YN

IC GATE DRVR LOW-SIDE 14DIP

Microchip Technology

142 5.34
- +

In den Warenkorb

Jetzt anfragen

MIC4469YN

Datenblatt

Tube - Active Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Inverting, Non-Inverting - 14ns, 13ns -40°C ~ 85°C (TA) Through Hole
MAX4426CSA+

MAX4426CSA+

IC GATE DRVR LOW-SIDE 8SOIC

Analog Devices Inc./Maxim Integrated

3125 5.43
- +

In den Warenkorb

Jetzt anfragen

MAX4426CSA+

Datenblatt

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.5A, 1.5A Inverting - 20ns, 20ns 0°C ~ 70°C (TA) Surface Mount
TC4469EOE

TC4469EOE

IC GATE DRVR LOW-SIDE 16SOIC

Microchip Technology

120 5.51
- +

In den Warenkorb

Jetzt anfragen

TC4469EOE

Datenblatt

Tube - Active Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Inverting, Non-Inverting - 15ns, 15ns -40°C ~ 150°C (TJ) Surface Mount
TC4469EPD

TC4469EPD

IC GATE DRVR LOW-SIDE 14DIP

Microchip Technology

937 5.58
- +

In den Warenkorb

Jetzt anfragen

TC4469EPD

Datenblatt

Tube - Active Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Inverting, Non-Inverting - 15ns, 15ns -40°C ~ 150°C (TJ) Through Hole
ICL7667EPA+

ICL7667EPA+

IC GATE DRVR HALF-BRIDGE 8DIP

Analog Devices Inc./Maxim Integrated

147 5.72
- +

In den Warenkorb

Jetzt anfragen

ICL7667EPA+

Datenblatt

Tube - Active - Independent 2 N-Channel MOSFET 4.5V ~ 17V 0.8V, 2V - Inverting - 20ns, 20ns 0°C ~ 150°C (TJ) Through Hole
LTC4441IS8-1#PBF

LTC4441IS8-1#PBF

IC GATE DRVR LOW-SIDE 8SOIC

Analog Devices Inc.

289 6.83
- +

In den Warenkorb

Jetzt anfragen

LTC4441IS8-1#PBF

Datenblatt

Tube - Active Low-Side Single 1 N-Channel MOSFET 5V ~ 25V 1.8V, 2V 6A, 6A Non-Inverting - 13ns, 8ns -40°C ~ 125°C (TJ) Surface Mount
IRS2308PBF

IRS2308PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

188 6.09
- +

In den Warenkorb

Jetzt anfragen

IRS2308PBF

Datenblatt

Tube - Not For New Designs Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 100ns, 35ns -40°C ~ 150°C (TJ) Through Hole
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