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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
ADP3625ARDZ-RL

ADP3625ARDZ-RL

IC GATE DRVR LOW-SIDE 8SOIC

Analog Devices Inc.

3395 3.15
- +

In den Warenkorb

Jetzt anfragen

ADP3625ARDZ-RL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Independent 2 N-Channel MOSFET 4.5V ~ 18V 0.8V, 2V 4A, 4A Inverting, Non-Inverting - 10ns, 10ns -40°C ~ 150°C (TJ) Surface Mount
ISL6625ACRZ-T

ISL6625ACRZ-T

IC GATE DRVR HALF-BRIDGE 8DFN

Renesas Electronics America Inc

2766 2.84
- +

In den Warenkorb

Jetzt anfragen

ISL6625ACRZ-T

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Synchronous 2 N-Channel MOSFET 5.5V ~ 13.2V - -, 3A Non-Inverting 36 V 31ns, 18ns 0°C ~ 125°C (TJ) Surface Mount
NCP252160MNTWG

NCP252160MNTWG

25V/60A INTEGRATED DRIVER AND MO

onsemi

3644 2.84
- +

In den Warenkorb

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NCP252160MNTWG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Single 2 N-Channel MOSFET 4.5V ~ 16V 0.7V, 2.65V 60A, 60A Non-Inverting 35 V 12ns, 6ns -40°C ~ 125°C (TA) Surface Mount
MAX4428EPA+

MAX4428EPA+

IC GATE DRVR LOW-SIDE 8DIP

Analog Devices Inc./Maxim Integrated

129 6.71
- +

In den Warenkorb

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MAX4428EPA+

Datenblatt

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.5A, 1.5A Inverting, Non-Inverting - 20ns, 20ns -40°C ~ 85°C (TA) Through Hole
MAX4427EPA+

MAX4427EPA+

IC GATE DRVR LOW-SIDE 8DIP

Analog Devices Inc./Maxim Integrated

107 6.71
- +

In den Warenkorb

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MAX4427EPA+

Datenblatt

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.5A, 1.5A Non-Inverting - 20ns, 20ns -40°C ~ 85°C (TA) Through Hole
HIP4086APZ

HIP4086APZ

IC GATE DRVR HALF-BRIDGE 24DIP

Renesas Electronics America Inc

350 6.99
- +

In den Warenkorb

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HIP4086APZ

Datenblatt

Tube - Active Half-Bridge 3-Phase 6 N-Channel MOSFET 7V ~ 15V 1V, 2.5V 500mA, 500mA Inverting, Non-Inverting 95 V 20ns, 10ns -40°C ~ 150°C (TJ) Through Hole
UC3706DW

UC3706DW

IC GATE DRVR LOW-SIDE 16SOIC

Texas Instruments

238 8.80
- +

In den Warenkorb

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UC3706DW

Datenblatt

Tube - Active Low-Side Independent 2 N-Channel MOSFET 5V ~ 40V 0.8V, 2.2V 1.5A, 1.5A Inverting, Non-Inverting - 40ns, 30ns 0°C ~ 70°C (TA) Surface Mount
IR2132SPBF

IR2132SPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies

530 11.92
- +

In den Warenkorb

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IR2132SPBF

Datenblatt

Tube - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 80ns, 35ns -40°C ~ 150°C (TJ) Surface Mount
2SD300C17A1

2SD300C17A1

IC GATE DRVR HALF-BRIDGE MODULE

Power Integrations

3924 133.87
- +

In den Warenkorb

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2SD300C17A1

Datenblatt

Tray SCALE™-2 Active Half-Bridge - 2 IGBT 14V ~ 16V - 30A, 30A - - - -40°C ~ 85°C (TA) Through Hole
1SP0635D2S1-33

1SP0635D2S1-33

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations

3488 150.41
- +

In den Warenkorb

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1SP0635D2S1-33

Datenblatt

Bulk SCALE™-2 Active High-Side or Low-Side Single 1 IGBT 14.5V ~ 15.5V - 35A, 35A - 3300 V 9ns, 30ns -40°C ~ 85°C (TA) Surface Mount
2DU180506MR04

2DU180506MR04

(ROHM: BSM180D12P2E002)

Tamura

2290 161.60
- +

In den Warenkorb

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Bulk - Active Half-Bridge Independent 2 IGBT, SiC MOSFET 5V - - - - 500ns, 500ns -40°C ~ 85°C (TA) Chassis Mount
2DU180506MR01

2DU180506MR01

(ROHM: BSM120D12P2C005)

Tamura

3981 161.60
- +

In den Warenkorb

Jetzt anfragen

2DU180506MR01

Datenblatt

Bulk - Active Half-Bridge Independent 2 SiC MOSFET 5V 0.8V, 8V 20mA, - - - 500ns, 500ns -25°C ~ 85°C Chassis Mount
2SP0320T2C0-12

2SP0320T2C0-12

IC GATE DRVR HALF-BRIDGE MODULE

Power Integrations

2034 193.16
- +

In den Warenkorb

Jetzt anfragen

2SP0320T2C0-12

Datenblatt

Tray SCALE™-2 Active Half-Bridge Independent 2 IGBT 14.5V ~ 15.5V - 20A, 20A - 1200 V 7ns, 25ns -40°C ~ 85°C (TA) Surface Mount
2SP0320V2A0-12

2SP0320V2A0-12

IC GATE DRVR HALF-BRIDGE MODULE

Power Integrations

2625 201.40
- +

In den Warenkorb

Jetzt anfragen

2SP0320V2A0-12

Datenblatt

Tray SCALE™-2 Active Half-Bridge Independent 2 IGBT 14.5V ~ 15.5V - 20A, 20A - 1200 V 7ns, 25ns -40°C ~ 85°C (TA) Surface Mount
1SP0635V2M1-17

1SP0635V2M1-17

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations

3307 347.11
- +

In den Warenkorb

Jetzt anfragen

1SP0635V2M1-17

Datenblatt

Bulk SCALE™-2 Active High-Side or Low-Side Single 1 IGBT 14.5V ~ 15.5V - 35A, 35A - 1700 V 9ns, 30ns -40°C ~ 85°C (TA) Surface Mount
ISL6208BIRZ-T

ISL6208BIRZ-T

IC GATE DRVR HALF-BRIDGE 8DFN

Renesas Electronics America Inc

2688 2.03
- +

In den Warenkorb

Jetzt anfragen

ISL6208BIRZ-T

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Synchronous 2 N-Channel MOSFET 4.5V ~ 5.5V 0.5V, 2V 2A, 2A Non-Inverting 33 V 8ns, 8ns -40°C ~ 125°C (TJ) Surface Mount
TPS2811DR

TPS2811DR

IC GATE DRVR LOW-SIDE 8SOIC

Texas Instruments

3668 3.09
- +

In den Warenkorb

Jetzt anfragen

TPS2811DR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Synchronous 2 N-Channel, P-Channel MOSFET 4V ~ 14V 1V, 4V 2A, 2A Inverting - 14ns, 15ns -40°C ~ 125°C (TA) Surface Mount
FAN73895MX

FAN73895MX

IC GATE DRVR HALF-BRIDGE 28SOIC

onsemi

2276 3.83
- +

In den Warenkorb

Jetzt anfragen

FAN73895MX

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 350mA, 650mA Non-Inverting 600 V 50ns, 30ns -40°C ~ 150°C (TJ) Surface Mount
LM25101ASD-1/NOPB

LM25101ASD-1/NOPB

IC GATE DRVR HALF-BRIDGE 8WSON

Texas Instruments

950 4.45
- +

In den Warenkorb

Jetzt anfragen

LM25101ASD-1/NOPB

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Independent 2 N-Channel MOSFET 9V ~ 14V 2.3V, - 3A, 3A Non-Inverting 100 V 430ns, 260ns -40°C ~ 125°C (TJ) Surface Mount
MCP14E3-E/MF

MCP14E3-E/MF

IC GATE DRVR LOW-SIDE 8DFN

Microchip Technology

198 2.54
- +

In den Warenkorb

Jetzt anfragen

MCP14E3-E/MF

Datenblatt

Tube - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 4A, 4A Inverting - 15ns, 18ns -40°C ~ 150°C (TJ) Surface Mount
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