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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDS6692

FDS6692

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

1349 0.59
- +

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FDS6692

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 12mOhm @ 12A, 10V 3V @ 250µA 25 nC @ 5 V ±16V 2164 pF @ 15 V - 1W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FQPF6N40CF

FQPF6N40CF

MOSFET N-CH 400V 6A TO220F

Fairchild Semiconductor

1300 0.59
- +

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FQPF6N40CF

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP32N12V2

FQP32N12V2

MOSFET N-CH 120V 32A TO220-3

Fairchild Semiconductor

1244 0.59
- +

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FQP32N12V2

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 120 V 32A (Tc) 10V 50mOhm @ 16A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1860 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
MTP5N40E

MTP5N40E

N-CHANNEL POWER MOSFET

onsemi

7418 0.60
- +

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MTP5N40E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDU8580

FDU8580

MOSFET N-CH 20V 35A IPAK

Fairchild Semiconductor

7200 0.60
- +

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FDU8580

Datenblatt

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V 2.5V @ 250µA 27 nC @ 10 V ±20V 1445 pF @ 10 V - 49.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF7665S2TR

AUIRF7665S2TR

AUTOMOTIVE DIRECTFET N CHANNEL

International Rectifier

4378 0.60
- +

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AUIRF7665S2TR

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 4.1A (Ta), 14.4A (Tc) 10V 62mOhm @ 8.9A, 10V 5V @ 25µA 13 nC @ 10 V ±20V 515 pF @ 25 V - 2.4W (Ta), 30W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RF1S17N06LSM

RF1S17N06LSM

LOGIC LEVEL GATE (5V) DEVICE

Harris Corporation

4000 0.60
- +

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RF1S17N06LSM

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 17A - - - - - - - - - Surface Mount
RF1S25N06SM

RF1S25N06SM

N-CHANNEL POWER MOSFET

Harris Corporation

3005 0.60
- +

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RF1S25N06SM

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 25A - - - - - - - - - Surface Mount
UPA2726UT1A-E2-AY

UPA2726UT1A-E2-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

3000 0.60
- +

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Bulk * Active - - - - - - - - - - - - - -
IRF9510

IRF9510

MOSFET P-CH 100V 4A TO220AB

Harris Corporation

2685 0.60
- +

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IRF9510

Datenblatt

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
RJK0364DPA-00#J0

RJK0364DPA-00#J0

MOSFET N-CH 30V 35A 8WPAK

Renesas Electronics America Inc

1890 0.60
- +

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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) - 7.8mOhm @ 17.5A, 10V - 10 nC @ 4.5 V - 1600 pF @ 10 V - 35W (Tc) 150°C (TJ) Surface Mount
IPP65R600C6

IPP65R600C6

N-CHANNEL POWER MOSFET

Infineon Technologies

1791 0.60
- +

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IPP65R600C6

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD16N03LSM9A

RFD16N03LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation

1540 0.60
- +

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RFD16N03LSM9A

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
HUFA75637P3

HUFA75637P3

MOSFET N-CH 100V 44A TO220-3

Fairchild Semiconductor

1472 0.60
- +

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HUFA75637P3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 250µA 108 nC @ 20 V ±20V 1700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N03S4L-03

IPI80N03S4L-03

N-CHANNEL POWER MOSFET

Infineon Technologies

952 0.60
- +

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IPI80N03S4L-03

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2.2V @ 90µA 140 nC @ 10 V ±16V 9750 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4620PBF

IRFSL4620PBF

MOSFET N-CH 200V 24A TO262

International Rectifier

800 0.60
- +

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IRFSL4620PBF

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 77.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1S15N08L

RF1S15N08L

LOGIC LEVEL GATE (5V) DEVICE

Harris Corporation

800 0.60
- +

In den Warenkorb

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RF1S15N08L

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 45A - - - - - - - - - Surface Mount
IRFR9110

IRFR9110

MOSFET P-CH 100V 3.1A DPAK

Harris Corporation

554 0.60
- +

In den Warenkorb

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IRFR9110

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) - 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF830BPBF-BE3

IRF830BPBF-BE3

MOSFET N-CH 500V 5.3A TO220AB

Vishay Siliconix

843 1.17
- +

In den Warenkorb

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IRF830BPBF-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) - 1.5Ohm @ 2.5A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 325 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD630TM

FQD630TM

MOSFET N-CH 200V 7A DPAK

Fairchild Semiconductor

9850 0.61
- +

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FQD630TM

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 550 pF @ 25 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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