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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDD068AN03L

FDD068AN03L

MOSFET N-CH 30V 17A/35A TO252AA

Fairchild Semiconductor

8203 0.61
- +

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FDD068AN03L

Datenblatt

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4105

AUIRFR4105

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

5362 0.61
- +

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AUIRFR4105

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMB506P

FDMB506P

MOSFET P-CH 20V 6.8A 8MLP

Fairchild Semiconductor

5268 0.61
- +

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FDMB506P

Datenblatt

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 1.8V, 4.5V 30mOhm @ 6.8A, 4.5V 1.5V @ 250µA 30 nC @ 4.5 V ±8V 2960 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SJ317NYTR-E

2SJ317NYTR-E

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc

4000 0.61
- +

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2SJ317NYTR-E

Datenblatt

Bulk * Obsolete - - - - - - - - - - - - - -
FQB9N25CTM

FQB9N25CTM

MOSFET N-CH 250V 8.8A D2PAK

Fairchild Semiconductor

3222 0.61
- +

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FQB9N25CTM

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 3.13W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SJ317NYTL-E

2SJ317NYTL-E

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc

3000 0.61
- +

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2SJ317NYTL-E

Datenblatt

Bulk * Obsolete - - - - - - - - - - - - - -
2SJ598-AY

2SJ598-AY

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics America Inc

2681 0.61
- +

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2SJ598-AY

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDU068AN03L

FDU068AN03L

MOSFET N-CH 30V 17A/35A IPAK

Fairchild Semiconductor

2514 0.61
- +

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FDU068AN03L

Datenblatt

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP2N15

RFP2N15

N-CHANNEL, MOSFET

Harris Corporation

2411 0.61
- +

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RFP2N15

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 2A (Tc) 10V 1.75Ohm @ 2A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75329D3

HUF75329D3

MOSFET N-CH 55V 20A IPAK

Fairchild Semiconductor

1792 0.61
- +

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HUF75329D3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 26mOhm @ 20A, 10V 4V @ 250µA 65 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI6N50TU

FQI6N50TU

MOSFET N-CH 500V 5.5A I2PAK

Fairchild Semiconductor

1650 0.61
- +

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FQI6N50TU

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.5A (Tc) 10V 1.3Ohm @ 2.8A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 790 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB3N60CTM

FQB3N60CTM

MOSFET N-CH 600V 3A D2PAK

Fairchild Semiconductor

1376 0.61
- +

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FQB3N60CTM

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3A (Tc) 10V 3.4Ohm @ 1.5A, 10V 4V @ 250µA 14 nC @ 10 V ±30V 565 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP44N08

FQP44N08

MOSFET N-CH 80V 44A TO220-3

Fairchild Semiconductor

1147 0.61
- +

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FQP44N08

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 44A (Tc) 10V 34mOhm @ 22A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 1430 pF @ 25 V - 127W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76639P3

HUFA76639P3

MOSFET N-CH 100V 51A TO220-3

Fairchild Semiconductor

973 0.61
- +

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HUFA76639P3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 51A (Tc) 4.5V, 10V 26mOhm @ 51A, 10V 3V @ 250µA 86 nC @ 10 V ±16V 2400 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI15P12TU

FQI15P12TU

MOSFET P-CH 120V 15A I2PAK

Fairchild Semiconductor

901 0.61
- +

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Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 120 V 15A (Tc) 10V 200mOhm @ 7.5A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 3.75W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFP9530

SFP9530

MOSFET P-CH 100V 10.5A TO220-3

Fairchild Semiconductor

762 0.61
- +

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SFP9530

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 10.5A (Tc) - 300mOhm @ 5.3A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1035 pF @ 25 V - 66W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP6N40D-BE3

SIHP6N40D-BE3

N-CHANNEL 400V

Vishay Siliconix

1000 1.19
- +

In den Warenkorb

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SIHP6N40D-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 311 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK4077-ZK-E1-AY

2SK4077-ZK-E1-AY

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

7500 0.63
- +

In den Warenkorb

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2SK4077-ZK-E1-AY

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
UPA2734GR-E1-AT

UPA2734GR-E1-AT

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

5000 0.63
- +

In den Warenkorb

Jetzt anfragen

Bulk * Active - - - - - - - - - - - - - -
RF1S25N06SM9A

RF1S25N06SM9A

N-CHANNEL POWER MOSFET

Harris Corporation

4000 0.63
- +

In den Warenkorb

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RF1S25N06SM9A

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
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