Willkommen in Element tech company!

+86 15361839241 +86 0755-23603516
Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPW20N60C3FKSA1

SPW20N60C3FKSA1

MOSFET N-CH 650V 20.7A TO247-3

Infineon Technologies

18487 7.61
- +

In den Warenkorb

Jetzt anfragen

SPW20N60C3FKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP140P05T

IXTP140P05T

MOSFET P-CH 50V 140A TO220AB

IXYS

1494 7.65
- +

In den Warenkorb

Jetzt anfragen

IXTP140P05T

Datenblatt

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 140A (Tc) 10V 9mOhm @ 70A, 10V 4V @ 250µA 200 nC @ 10 V ±15V 13500 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1835-E

2SK1835-E

MOSFET N-CH 1500V 4A TO3P

Renesas Electronics America Inc

2432 7.85
- +

In den Warenkorb

Jetzt anfragen

2SK1835-E

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 4A (Ta) 15V 7Ohm @ 2A, 15V - - ±20V 1700 pF @ 10 V - 125W (Tc) 150°C (TJ) Through Hole
IXTA96P085T

IXTA96P085T

MOSFET P-CH 85V 96A TO263

IXYS

3395 7.10
- +

In den Warenkorb

Jetzt anfragen

IXTA96P085T

Datenblatt

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 85 V 96A (Tc) 10V 13mOhm @ 48A, 10V 4V @ 250µA 180 nC @ 10 V ±15V 13100 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP20N60C3XKSA1

SPP20N60C3XKSA1

MOSFET N-CH 600V 20.7A TO220-3

Infineon Technologies

3148 7.20
- +

In den Warenkorb

Jetzt anfragen

SPP20N60C3XKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R099C6XKSA1

IPA60R099C6XKSA1

MOSFET N-CH 600V 37.9A TO220-FP

Infineon Technologies

13113 8.14
- +

In den Warenkorb

Jetzt anfragen

IPA60R099C6XKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 18.1A, 10V 3.5V @ 1.21mA 119 nC @ 10 V ±20V 2660 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
G3R450MT17J

G3R450MT17J

SIC MOSFET N-CH 9A TO263-7

GeneSiC Semiconductor

7574 8.52
- +

In den Warenkorb

Jetzt anfragen

G3R450MT17J

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 9A (Tc) 15V 585mOhm @ 4A, 15V 2.7V @ 2mA 18 nC @ 15 V ±15V 454 pF @ 1000 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP110N20N3GXKSA1

IPP110N20N3GXKSA1

MOSFET N-CH 200V 88A TO220-3

Infineon Technologies

5787 9.34
- +

In den Warenkorb

Jetzt anfragen

IPP110N20N3GXKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 88A (Tc) 10V 11mOhm @ 88A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C170400K3S

UF3C170400K3S

SICFET N-CH 1700V 7.6A TO247-3

UnitedSiC

20849 9.48
- +

In den Warenkorb

Jetzt anfragen

UF3C170400K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1700 V 7.6A (Tc) 12V 515mOhm @ 5A, 12V 6V @ 10mA 27.5 nC @ 15 V ±25V 740 pF @ 100 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R060P7XKSA1

IPW60R060P7XKSA1

MOSFET N-CH 600V 48A TO247-3

Infineon Technologies

2205 8.55
- +

In den Warenkorb

Jetzt anfragen

IPW60R060P7XKSA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 67 nC @ 10 V ±20V 2895 pF @ 400 V - 164W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT60R050G7XTMA1

IPT60R050G7XTMA1

MOSFET N-CH 650V 44A 8HSOF

Infineon Technologies

2580 12.93
- +

In den Warenkorb

Jetzt anfragen

IPT60R050G7XTMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 50mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2670 pF @ 400 V - 245W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UJ4C075060K4S

UJ4C075060K4S

SICFET N-CH 750V 28A TO247-4

UnitedSiC

2828 10.59
- +

In den Warenkorb

Jetzt anfragen

UJ4C075060K4S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 28A (Tc) - 74mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R099CPXKSA1

IPP60R099CPXKSA1

MOSFET N-CH 650V 31A TO220-3

Infineon Technologies

365 10.75
- +

In den Warenkorb

Jetzt anfragen

IPP60R099CPXKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 31A (Tc) 10V 99mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH60N50P3

IXFH60N50P3

MOSFET N-CH 500V 60A TO247AD

IXYS

4200 10.78
- +

In den Warenkorb

Jetzt anfragen

IXFH60N50P3

Datenblatt

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 100mOhm @ 30A, 10V 5V @ 4mA 96 nC @ 10 V ±30V 6250 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT3160KLGC11

SCT3160KLGC11

SICFET N-CH 1200V 17A TO247N

Rohm Semiconductor

1333 10.99
- +

In den Warenkorb

Jetzt anfragen

SCT3160KLGC11

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - 103W (Tc) 175°C (TJ) Through Hole
IPP110N20NAAKSA1

IPP110N20NAAKSA1

MOSFET N-CH 200V 88A TO220-3

Infineon Technologies

1490 11.21
- +

In den Warenkorb

Jetzt anfragen

IPP110N20NAAKSA1

Datenblatt

Tube OptimWatt™ Active N-Channel MOSFET (Metal Oxide) 200 V 88A (Tc) 10V 10.7mOhm @ 88A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH50N20

IXFH50N20

MOSFET N-CH 200V 50A TO247AD

IXYS

2136 11.23
- +

In den Warenkorb

Jetzt anfragen

IXFH50N20

Datenblatt

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 45mOhm @ 25A, 10V 4V @ 4mA 220 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
G3R75MT12K

G3R75MT12K

SIC MOSFET N-CH 41A TO247-4

GeneSiC Semiconductor

951 11.42
- +

In den Warenkorb

Jetzt anfragen

G3R75MT12K

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 15V 90mOhm @ 20A, 15V 2.69V @ 7.5mA 54 nC @ 15 V ±15V 1560 pF @ 800 V - 207W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH15N50L2

IXTH15N50L2

MOSFET N-CH 500V 15A TO247

IXYS

813 11.66
- +

In den Warenkorb

Jetzt anfragen

IXTH15N50L2

Datenblatt

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 480mOhm @ 7.5A, 10V 4.5V @ 250µA 123 nC @ 10 V ±20V 4080 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
G3R75MT12J

G3R75MT12J

SIC MOSFET N-CH 42A TO263-7

GeneSiC Semiconductor

2540 11.69
- +

In den Warenkorb

Jetzt anfragen

G3R75MT12J

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 42A (Tc) 15V 90mOhm @ 20A, 15V 2.69V @ 7.5mA 54 nC @ 15 V ±15V 1560 pF @ 800 V - 224W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 42446 Records«Prev1... 3233343536373839...2123Next»
Fordern Sie ein Angebot an
Teilenummer
Menge
Kontakt
E-Mail
Bemerkungen
  • HOME

    HOME

    PRODUCT

    PRODUKT

    PHONE

    TELEFON

    USER

    BENUTZER