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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
G3R30MT12J

G3R30MT12J

SIC MOSFET N-CH 96A TO263-7

GeneSiC Semiconductor

529 24.20
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G3R30MT12J

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 96A (Tc) 15V 36mOhm @ 50A, 15V 2.69V @ 12mA 155 nC @ 15 V ±15V 3901 pF @ 800 V - 459W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IMZA65R027M1HXKSA1

IMZA65R027M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies

116 28.76
- +

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Tube - Active - - - 59A (Tc) - - - - - - - - - -
UJ3C120040K3S

UJ3C120040K3S

SICFET N-CH 1200V 65A TO247-3

UnitedSiC

1972 29.30
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UJ3C120040K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 65A (Tc) 12V 45mOhm @ 40A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120040K3S

UF3C120040K3S

SICFET N-CH 1200V 65A TO247-3

UnitedSiC

1063 29.30
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UF3C120040K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 65A (Tc) 12V 45mOhm @ 40A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120040K4S

UF3C120040K4S

SICFET N-CH 1200V 65A TO247-4

UnitedSiC

918 29.30
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UF3C120040K4S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 65A (Tc) 12V 45mOhm @ 40A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R019C7FKSA1

IPW65R019C7FKSA1

MOSFET N-CH 650V 75A TO247-3

Infineon Technologies

279 29.95
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IPW65R019C7FKSA1

Datenblatt

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 19mOhm @ 58.3A, 10V 4V @ 2.92mA 215 nC @ 10 V ±20V 9900 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT02N450HV

IXTT02N450HV

MOSFET N-CH 4500V 200MA TO268

IXYS

956 32.50
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IXTT02N450HV

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 4500 V 200mA (Tc) 10V 750Ohm @ 10mA, 10V 6.5V @ 250µA 10.4 nC @ 10 V ±20V 256 pF @ 25 V - 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G3R45MT17D

G3R45MT17D

SIC MOSFET N-CH 61A TO247-3

GeneSiC Semiconductor

146 34.69
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G3R45MT17D

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 61A (Tc) 15V 58mOhm @ 40A, 15V 2.7V @ 8mA 182 nC @ 15 V ±15V 4523 pF @ 1000 V - 438W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R45MT17K

G3R45MT17K

SIC MOSFET N-CH 61A TO247-4

GeneSiC Semiconductor

919 35.06
- +

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G3R45MT17K

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 61A (Tc) 15V 58mOhm @ 40A, 15V 2.7V @ 8mA 182 nC @ 15 V ±15V 4523 pF @ 1000 V - 438W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTK90N25L2

IXTK90N25L2

MOSFET N-CH 250V 90A TO264

IXYS

2784 35.52
- +

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IXTK90N25L2

Datenblatt

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 250 V 90A (Tc) 10V 33mOhm @ 45A, 10V 4.5V @ 3mA 640 nC @ 10 V ±20V 23000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTH4L022N120M3S

NTH4L022N120M3S

SIC MOS TO247-4L 22MOHM 1200V

onsemi

184 36.15
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NTH4L022N120M3S

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 18V 30mOhm @ 40A, 18V 4.4V @ 20mA 151 nC @ 18 V +22V, -10V 3175 pF @ 800 V - 352W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTN170P10P

IXTN170P10P

MOSFET P-CH 100V 170A SOT227B

IXYS

223 37.01
- +

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IXTN170P10P

Datenblatt

Tube Polar Active P-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 12mOhm @ 500mA, 10V 4V @ 1mA 240 nC @ 10 V ±20V 12600 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN600N04T2

IXTN600N04T2

MOSFET N-CH 40V 600A SOT227B

IXYS

209 37.02
- +

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IXTN600N04T2

Datenblatt

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 600A (Tc) 10V 1.05mOhm @ 100A, 10V 3.5V @ 250µA 590 nC @ 10 V ±20V 40000 pF @ 25 V - 940W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXTK60N50L2

IXTK60N50L2

MOSFET N-CH 500V 60A TO264

IXYS

961 37.96
- +

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IXTK60N50L2

Datenblatt

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 100mOhm @ 30A, 10V 4.5V @ 250µA 610 nC @ 10 V ±30V 24000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC015SMA070B

MSC015SMA070B

SICFET N-CH 700V 131A TO247-3

Microchip Technology

289 38.19
- +

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MSC015SMA070B

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 131A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 1mA 215 nC @ 20 V +25V, -10V 4500 pF @ 700 V - 400W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R20MT12K

G3R20MT12K

SIC MOSFET N-CH 128A TO247-4

GeneSiC Semiconductor

689 38.25
- +

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G3R20MT12K

Datenblatt

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 128A (Tc) 15V 24mOhm @ 60A, 15V 2.69V @ 15mA 219 nC @ 15 V ±15V 5873 pF @ 800 V - 542W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFN32N100P

IXFN32N100P

MOSFET N-CH 1000V 27A SOT-227B

IXYS

848 38.52
- +

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IXFN32N100P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 27A (Tc) 10V 320mOhm @ 16A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 14200 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
UJ4SC075009K4S

UJ4SC075009K4S

750V/9MOHM, SIC, STACKED CASCODE

UnitedSiC

193 39.32
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UJ4SC075009K4S

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 106A (Tc) 12V 11.5mOhm @ 70A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3340 pF @ 400 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC025SMA120B

MSC025SMA120B

SICFET N-CH 1.2KV 103A TO247-3

Microchip Technology

399 42.86
- +

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MSC025SMA120B

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 103A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
STE53NC50

STE53NC50

MOSFET N-CH 500V 53A ISOTOP

STMicroelectronics

175 43.42
- +

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STE53NC50

Datenblatt

Tube PowerMESH™ II Active N-Channel MOSFET (Metal Oxide) 500 V 53A (Tc) 10V 80mOhm @ 27A, 10V 4V @ 250µA 434 nC @ 10 V ±30V 11200 pF @ 25 V - 460W (Tc) 150°C (TJ) Chassis Mount
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