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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SJ687-ZK-E2-AY

2SJ687-ZK-E2-AY

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

2500 1.36
- +

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2SJ687-ZK-E2-AY

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
HUF75637S3ST

HUF75637S3ST

MOSFET N-CH 100V 44A D2PAK

Fairchild Semiconductor

1429 1.36
- +

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HUF75637S3ST

Datenblatt

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 250µA 108 nC @ 20 V ±20V 1700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP2N65X2

IXTP2N65X2

MOSFET N-CH 650V 2A TO220

IXYS

298 2.80
- +

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IXTP2N65X2

Datenblatt

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Tc) 10V 2.3Ohm @ 1A, 10V 5V @ 250µA 4.3 nC @ 10 V ±30V 180 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF731

IRF731

N-CHANNEL POWER MOSFET

Harris Corporation

4369 1.37
- +

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IRF731

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 5.5A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP340

IRFP340

MOSFET N-CH 400V 11A TO247-3

Harris Corporation

1224 1.37
- +

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IRFP340

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11A (Tc) 10V 550mOhm @ 6.6A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI60R280C6

IPI60R280C6

MOSFET N-CH 600V 13.8A TO262-3

Infineon Technologies

1083 1.37
- +

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IPI60R280C6

Datenblatt

Bulk CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) - 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP12N60E-BE3

SIHP12N60E-BE3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix

994 2.82
- +

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SIHP12N60E-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) - 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI072N10N3 G

IPI072N10N3 G

N-CHANNEL POWER MOSFET

Infineon Technologies

1000 1.37
- +

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IPI072N10N3 G

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
HUF75344A3

HUF75344A3

MOSFET N-CH 55V 75A TO3P

Fairchild Semiconductor

616 1.37
- +

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HUF75344A3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 208 nC @ 20 V ±20V 4855 pF @ 25 V - 288.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP040N08NF2SAKMA1

IPP040N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies

870 2.83
- +

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IPP040N08NF2SAKMA1

Datenblatt

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Ta), 115A (Tc) 6V, 10V 4mOhm @ 80A, 10V 3.8V @ 85µA 81 nC @ 10 V ±20V 3800 pF @ 40 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP1N100P

IXTP1N100P

MOSFET N-CH 1000V 1A TO220AB

IXYS

590 2.84
- +

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IXTP1N100P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1A (Tc) 10V 15Ohm @ 500mA, 10V 4.5V @ 50µA 15.5 nC @ 10 V ±20V 331 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA10N80C

FQA10N80C

MOSFET N-CH 800V 10A TO3P

Fairchild Semiconductor

7600 1.38
- +

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FQA10N80C

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 2800 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP08N100P

IXTP08N100P

MOSFET N-CH 1000V 800MA TO220AB

IXYS

287 2.84
- +

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IXTP08N100P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tc) 10V 20Ohm @ 500mA, 10V 4V @ 50µA 11.3 nC @ 10 V ±20V 240 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S640

RF1S640

18A, 200V, 0.180 OHM, N-CHANNEL

Harris Corporation

3985 1.38
- +

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RF1S640

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTPF250N65S3H

NTPF250N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

1000 2.85
- +

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NTPF250N65S3H

Datenblatt

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tj) 10V 250mOhm @ 6.5A, 10V 4V @ 1.1mA 24 nC @ 10 V ±30V 1261 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6006KNXC7G

R6006KNXC7G

600V 6A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor

997 2.87
- +

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R6006KNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 830mOhm @ 3A, 10V 5.5V @ 1mA 12 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
AUIRF3415

AUIRF3415

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

564 1.39
- +

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AUIRF3415

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3659-AZ

2SK3659-AZ

MOSFET N-CH 20V 65A TO220-3

Renesas Electronics America Inc

1772 1.40
- +

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2SK3659-AZ

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 65A (Tc) - 5.7mOhm @ 40A, 10V 2.5V @ 1mA 32 nC @ 10 V - 1700 pF @ 10 V - - - Through Hole
RFG40N10

RFG40N10

MOSFET N-CH 100V 40A TO247-3

Fairchild Semiconductor

1560 1.40
- +

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RFG40N10

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 40mOhm @ 40A, 10V 4V @ 250µA 300 nC @ 20 V ±20V - - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ40PBF-BE3

IRFZ40PBF-BE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix

766 2.91
- +

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IRFZ40PBF-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
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