Foto | Mfr. Teil # | Lagerbestand | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
R6504KNXC7G650V 4A TO-220FM, HIGH-SPEED SWI |
996 | 2.65 |
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Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Ta) | 10V | 1.05Ohm @ 1.5A, 10V | 5V @ 130µA | 10 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole | |
HAT2033RJ01-ELN-CHANNEL POWER MOSFET |
2450 | 1.31 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
FQI50N06LTUMOSFET N-CH 60V 52.4A I2PAK |
1730 | 1.31 |
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Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 52.4A (Tc) | 5V, 10V | 21mOhm @ 26.2A, 10V | 2.5V @ 250µA | 32 nC @ 5 V | ±20V | 1630 pF @ 25 V | - | 3.75W (Ta), 121W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FQA7N80MOSFET N-CH 800V 7.2A TO3P |
780 | 1.31 |
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Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 7.2A (Tc) | 10V | 1.5Ohm @ 3.6A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1850 pF @ 25 V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FQI12N60TUMOSFET N-CH 600V 10.5A I2PAK |
627 | 1.31 |
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Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.5A (Tc) | 10V | 700mOhm @ 5.3A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 3.13W (Ta), 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
RF1S40N10SMN-CHANNEL POWER MOSFET |
3245 | 1.32 |
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Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A | - | - | - | - | - | - | - | - | - | Surface Mount | |
IRFPC406.8A 600V 1.200 OHM N-CHANNEL |
968 | 1.32 |
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Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 1.2Ohm @ 4.1A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
AUIRFB4410-IRAUTOMOTIVE HEXFET N CHANNEL |
3108 | 1.33 |
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Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
IXTP90N055T2MOSFET N-CH 55V 90A TO220AB |
3396 | 2.71 |
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Datenblatt |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 90A (Tc) | 10V | 8.4mOhm @ 25A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 2770 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRFB42N20DPBFCHANNEL |
1150 | 1.33 |
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Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 44A (Tc) | 10V | 55mOhm @ 26A, 10V | 5.5V @ 250µA | 140 nC @ 10 V | ±30V | 3430 pF @ 25 V | - | 2.4W (Ta), 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
AUIRFS8403TRRMOSFET N-CH 40V 123A D2PAK |
800 | 1.33 |
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Datenblatt |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 123A (Tc) | - | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93 nC @ 10 V | ±20V | 3183 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IPP06CN10LGN-CHANNEL POWER MOSFET |
490 | 1.33 |
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Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
TPIC2202KCN-CHANNEL POWER MOSFET |
5494 | 1.34 |
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Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
FDZ208PMOSFET P-CH 30V 12.5A 30BGA |
5403 | 1.34 |
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Datenblatt |
Bulk | PowerTrench® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 12.5A (Ta) | 4.5V, 10V | 10.5mOhm @ 12.5A, 10V | 3V @ 250µA | 35 nC @ 5 V | ±25V | 2409 pF @ 15 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
IPP60R385CPMOSFET N-CH 600V 9A TO220-3-1 |
525 | 1.34 |
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Datenblatt |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | - | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22 nC @ 10 V | ±20V | 790 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
AUIRFR4104TRLAUTOMOTIVE HEXFET N CHANNEL |
4448 | 1.35 |
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Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | - | 5.5mOhm @ 42A, 10V | 4V @ 250µA | 89 nC @ 10 V | - | 2950 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
PSMN3R3-80ES,127ELEMENT, NCHANNEL, SILICON, MOSF |
1415 | 1.35 |
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Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 3.3mOhm @ 25A, 10V | 4V @ 1mA | 139 nC @ 10 V | ±20V | 9961 pF @ 40 V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
2SK3114-S17-AZPOWER FIELD-EFFECT TRANSISTOR |
1000 | 1.35 |
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Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
IRFP341N-CHANNEL POWER MOSFET |
233 | 1.35 |
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Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 11A (Tc) | 10V | 550mOhm @ 5.5A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
RJK0379DPA-00#J53N-CHANNEL POWER MOSFET |
9000 | 1.36 |
In den WarenkorbJetzt anfragen |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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