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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6504KNXC7G

R6504KNXC7G

650V 4A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor

996 2.65
- +

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R6504KNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Ta) 10V 1.05Ohm @ 1.5A, 10V 5V @ 130µA 10 nC @ 10 V ±20V 270 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
HAT2033RJ01-EL

HAT2033RJ01-EL

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2450 1.31
- +

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FQI50N06LTU

FQI50N06LTU

MOSFET N-CH 60V 52.4A I2PAK

Fairchild Semiconductor

1730 1.31
- +

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FQI50N06LTU

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 52.4A (Tc) 5V, 10V 21mOhm @ 26.2A, 10V 2.5V @ 250µA 32 nC @ 5 V ±20V 1630 pF @ 25 V - 3.75W (Ta), 121W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA7N80

FQA7N80

MOSFET N-CH 800V 7.2A TO3P

Fairchild Semiconductor

780 1.31
- +

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FQA7N80

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 7.2A (Tc) 10V 1.5Ohm @ 3.6A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1850 pF @ 25 V - 198W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI12N60TU

FQI12N60TU

MOSFET N-CH 600V 10.5A I2PAK

Fairchild Semiconductor

627 1.31
- +

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FQI12N60TU

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S40N10SM

RF1S40N10SM

N-CHANNEL POWER MOSFET

Harris Corporation

3245 1.32
- +

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RF1S40N10SM

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 40A - - - - - - - - - Surface Mount
IRFPC40

IRFPC40

6.8A 600V 1.200 OHM N-CHANNEL

Harris Corporation

968 1.32
- +

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IRFPC40

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1.2Ohm @ 4.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFB4410-IR

AUIRFB4410-IR

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

3108 1.33
- +

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AUIRFB4410-IR

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IXTP90N055T2

IXTP90N055T2

MOSFET N-CH 55V 90A TO220AB

IXYS

3396 2.71
- +

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IXTP90N055T2

Datenblatt

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 8.4mOhm @ 25A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 2770 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB42N20DPBF

IRFB42N20DPBF

CHANNEL

International Rectifier

1150 1.33
- +

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IRFB42N20DPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 44A (Tc) 10V 55mOhm @ 26A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3430 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS8403TRR

AUIRFS8403TRR

MOSFET N-CH 40V 123A D2PAK

International Rectifier

800 1.33
- +

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AUIRFS8403TRR

Datenblatt

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) - 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP06CN10LG

IPP06CN10LG

N-CHANNEL POWER MOSFET

Infineon Technologies

490 1.33
- +

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IPP06CN10LG

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
TPIC2202KC

TPIC2202KC

N-CHANNEL POWER MOSFET

Texas Instruments

5494 1.34
- +

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TPIC2202KC

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDZ208P

FDZ208P

MOSFET P-CH 30V 12.5A 30BGA

Fairchild Semiconductor

5403 1.34
- +

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FDZ208P

Datenblatt

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 10.5mOhm @ 12.5A, 10V 3V @ 250µA 35 nC @ 5 V ±25V 2409 pF @ 15 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP60R385CP

IPP60R385CP

MOSFET N-CH 600V 9A TO220-3-1

Infineon Technologies

525 1.34
- +

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IPP60R385CP

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) - 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR4104TRL

AUIRFR4104TRL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

4448 1.35
- +

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AUIRFR4104TRL

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) - 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V - 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN3R3-80ES,127

PSMN3R3-80ES,127

ELEMENT, NCHANNEL, SILICON, MOSF

NXP USA Inc.

1415 1.35
- +

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PSMN3R3-80ES,127

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.3mOhm @ 25A, 10V 4V @ 1mA 139 nC @ 10 V ±20V 9961 pF @ 40 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3114-S17-AZ

2SK3114-S17-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc

1000 1.35
- +

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2SK3114-S17-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFP341

IRFP341

N-CHANNEL POWER MOSFET

Harris Corporation

233 1.35
- +

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IRFP341

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 11A (Tc) 10V 550mOhm @ 5.5A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1250 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK0379DPA-00#J53

RJK0379DPA-00#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

9000 1.36
- +

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Bulk * Active - - - - - - - - - - - - - -
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