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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFD323

IRFD323

N-CHANNEL POWER MOSFET

Harris Corporation

982 1.40
- +

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IRFD323

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 400mA (Tc) 10V 2.5Ohm @ 250mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 455 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6009ENXC7G

R6009ENXC7G

600V 9A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor

1000 2.92
- +

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R6009ENXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 535mOhm @ 2.8A, 10V 4V @ 1mA 23 nC @ 10 V ±20V 430 pF @ 25 V - 48W (Tc) 150°C (TJ) Through Hole
R6509ENXC7G

R6509ENXC7G

650V 9A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor

1000 2.92
- +

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R6509ENXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Ta) 10V 585mOhm @ 2.8A, 10V 4V @ 230µA 24 nC @ 10 V ±20V 430 pF @ 25 V - 48W (Tc) 150°C (TJ) Through Hole
R6009KNXC7G

R6009KNXC7G

600V 9A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor

1000 2.92
- +

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R6009KNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 535mOhm @ 2.8A, 10V 5V @ 1mA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 48W (Tc) 150°C (TJ) Through Hole
IRFZ44RPBF-BE3

IRFZ44RPBF-BE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix

966 2.92
- +

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IRFZ44RPBF-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76445S3ST

HUF76445S3ST

MOSFET N-CH 60V 75A D2PAK

Fairchild Semiconductor

385 1.40
- +

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HUF76445S3ST

Datenblatt

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 6.5mOhm @ 75A, 10V 3V @ 250µA 150 nC @ 10 V ±16V 4965 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK190E65Z,S1X

TK190E65Z,S1X

650V DTMOS VI TO-220 190MOHM

Toshiba Semiconductor and Storage

200 2.92
- +

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TK190E65Z,S1X

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C Through Hole
HUF75343S3_NL

HUF75343S3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

360 1.40
- +

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HUF75343S3_NL

Datenblatt

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDI8442

FDI8442

MOSFET N-CH 40V 23A/80A I2PAK

Fairchild Semiconductor

6546 1.41
- +

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FDI8442

Datenblatt

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 23A (Ta), 80A (Tc) 10V 2.9mOhm @ 80A, 10V 4V @ 250µA 235 nC @ 10 V ±20V 12200 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75639S3

HUF75639S3

MOSFET N-CH 100V 56A I2PAK

Harris Corporation

5937 1.41
- +

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HUF75639S3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP5690

FDP5690

MOSFET N-CH 60V 32A TO220-3

Fairchild Semiconductor

5075 1.41
- +

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FDP5690

Datenblatt

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 6V, 10V 27mOhm @ 16A, 10V 4V @ 250µA 33 nC @ 10 V ±20V 1120 pF @ 25 V - 58W (Tc) -65°C ~ 175°C (TJ) Through Hole
FQPF18N50V2SDTU

FQPF18N50V2SDTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

4950 1.41
- +

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FQPF18N50V2SDTU

Datenblatt

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tj) 10V 265mOhm @ 9A, 10V 5V @ 250µA 55 nC @ 10 V ±30V 3290 pF @ 25 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2329L-E

2SK2329L-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

4294 1.41
- +

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2SK2329L-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
NTB12N50T4

NTB12N50T4

N-CHANNEL POWER MOSFET

onsemi

3989 1.41
- +

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NTB12N50T4

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FQI47P06TU

FQI47P06TU

MOSFET P-CH 60V 47A I2PAK

Fairchild Semiconductor

3979 1.41
- +

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FQI47P06TU

Datenblatt

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 47A (Tc) 10V 26mOhm @ 23.5A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3600 pF @ 25 V - 3.75W (Ta), 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDW264P

FDW264P

MOSFET P-CH 20V 9.7A 8TSSOP

Fairchild Semiconductor

1494 1.41
- +

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FDW264P

Datenblatt

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9.7A (Ta) 2.5V, 4.5V 10mOhm @ 9.7A, 4.5V 1.5V @ 250µA 135 nC @ 5 V ±12V 7225 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP040N06NF2SAKMA1

IPP040N06NF2SAKMA1

MOSFET N-CH

Infineon Technologies

961 1.41
- +

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IPP040N06NF2SAKMA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 6V, 10V 4mOhm @ 80A, 10V 3.3V @ 50µA 44 nC @ 10 V ±20V 3375 pF @ 30 V - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB46N15TM

FQB46N15TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

570 1.41
- +

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FQB46N15TM

Datenblatt

Bulk QFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 45.6A (Tc) 10V 42mOhm @ 22.8A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3250 pF @ 25 V - 3.75W (Ta), 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA4N65X2

IXTA4N65X2

MOSFET N-CH 650V 4A TO263

IXYS

3744 2.98
- +

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IXTA4N65X2

Datenblatt

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 850mOhm @ 2A, 10V 5V @ 250µA 8.3 nC @ 10 V ±30V 455 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW65R280C6

IPW65R280C6

650 V COOLMOS E6 POWER MOSFET

Infineon Technologies

950 1.42
- +

In den Warenkorb

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IPW65R280C6

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
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