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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB9N60APBF-BE3

IRFB9N60APBF-BE3

MOSFET N-CH 600V 9.2A TO220AB

Vishay Siliconix

3606 3.22
- +

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IRFB9N60APBF-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) - 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
R8008ANJGTL

R8008ANJGTL

NCH 800V 8A POWER MOSFET : R8008

Rohm Semiconductor

1000 6.10
- +

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R8008ANJGTL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.03Ohm @ 4A, 10V 5V @ 1mA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 195W (Tc) 150°C (TJ) Surface Mount
2SK3225-Z-AZ

2SK3225-Z-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

761 1.50
- +

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2SK3225-Z-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFF9232

IRFF9232

P-CHANNEL POWER MOSFET

Harris Corporation

582 1.50
- +

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IRFF9232

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) - - - - - - - 25W - Through Hole
RFM12P08

RFM12P08

P-CHANNEL POWER MOSFET

Harris Corporation

358 1.50
- +

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RFM12P08

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 12A (Tc) 10V 300mOhm @ 6A, 10V 4V @ 1mA - ±20V 1500 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK155A65Z,S4X

TK155A65Z,S4X

MOSFET N-CH 650V 18A TO220SIS

Toshiba Semiconductor and Storage

2633 3.29
- +

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TK155A65Z,S4X

Datenblatt

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 155mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 40W (Tc) 150°C Through Hole
2SK3814-AZ

2SK3814-AZ

MOSFET N-CH 60V 60A TO251

Renesas Electronics America Inc

6430 1.52
- +

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2SK3814-AZ

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) - 8.7mOhm @ 30A, 10V - 95 nC @ 10 V - 5450 pF @ 10 V - 1W (Ta), 84W (Tc) 150°C (TJ) Through Hole
IPB051NE8NG

IPB051NE8NG

N-CHANNEL POWER MOSFET

Infineon Technologies

775 1.52
- +

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IPB051NE8NG

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RFL1N15

RFL1N15

N-CHANNEL POWER MOSFET

Harris Corporation

4903 1.53
- +

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RFL1N15

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 1A (Tc) 10V 1.9Ohm @ 1A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB2670

FDB2670

MOSFET N-CH 200V 19A TO263AB

Fairchild Semiconductor

3853 1.53
- +

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FDB2670

Datenblatt

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 19A (Ta) 10V 130mOhm @ 10A, 10V 4.5V @ 250µA 38 nC @ 10 V ±20V 1320 pF @ 100 V - 93W (Tc) -65°C ~ 175°C (TJ) Surface Mount
FDS4072N7

FDS4072N7

MOSFET N-CH 40V 12.4A 8SO

Fairchild Semiconductor

8575 1.55
- +

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FDS4072N7

Datenblatt

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 12.4A (Ta) 4.5V, 10V 9mOhm @ 13.7A, 10V 3V @ 250µA 46 nC @ 4.5 V ±12V 4299 pF @ 20 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
UPA2717GR-E1-AT

UPA2717GR-E1-AT

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

7306 1.55
- +

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UPA2717GR-E1-AT

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
UPA2717AGR-E1-AT

UPA2717AGR-E1-AT

MOSFET P-CH 30V 15A 8PSOP

Renesas Electronics America Inc

2500 1.55
- +

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UPA2717AGR-E1-AT

Datenblatt

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) - 5.5mOhm @ 7.5A, 10V 2.5V @ 1mA 130 nC @ 10 V - 3550 pF @ 10 V - - - Surface Mount
2SK1093-E

2SK1093-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

931 1.55
- +

In den Warenkorb

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Bulk * Active - - - - - - - - - - - - - -
IPU95R450P7AKMA1

IPU95R450P7AKMA1

MOSFET N-CH 950V 14A TO251-3

Infineon Technologies

974 3.41
- +

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IPU95R450P7AKMA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 14A (Tc) 10V 450mOhm @ 7.2A, 10V 3.5V @ 360µA 35 nC @ 10 V ±20V 1053 pF @ 400 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76443S3S

HUF76443S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

400 1.55
- +

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HUF76443S3S

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 8mOhm @ 75A, 10V 3V @ 250µA 129 nC @ 10 V ±16V 4115 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFP6N45

RFP6N45

N-CHANNEL POWER MOSFET

Harris Corporation

210 1.55
- +

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RFP6N45

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 6A (Tc) 10V 1.25Ohm @ 3A, 10V 4V @ 1mA - ±20V 1500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6011ENXC7G

R6011ENXC7G

600V 11A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

1000 3.43
- +

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R6011ENXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 390mOhm @ 3.8A, 10V 4V @ 1mA 32 nC @ 10 V ±20V 670 pF @ 25 V - 53W (Tc) 150°C (TJ) Through Hole
ISL9N303AS3ST

ISL9N303AS3ST

MOSFET N-CH 30V 75A D2PAK

Fairchild Semiconductor

8377 1.56
- +

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ISL9N303AS3ST

Datenblatt

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 3.2mOhm @ 75A, 10V 3V @ 250µA 172 nC @ 10 V ±20V 7000 pF @ 15 V - 215W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6011KNXC7G

R6011KNXC7G

600V 11A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

1000 3.45
- +

In den Warenkorb

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R6011KNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 390mOhm @ 3.8A, 10V 5V @ 1mA 22 nC @ 10 V ±20V 740 pF @ 25 V - 53W (Tc) 150°C (TJ) Through Hole
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