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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA32P20T

IXTA32P20T

MOSFET P-CH 200V 32A TO263

IXYS

280 9.00
- +

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IXTA32P20T

Datenblatt

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 130mOhm @ 16A, 10V 4V @ 250µA 185 nC @ 10 V ±15V 14500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF300P227

IRF300P227

MOSFET N-CH 300V 50A TO247AC

Infineon Technologies

144 9.03
- +

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IRF300P227

Datenblatt

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 300 V 50A (Tc) 10V 40mOhm @ 30A, 10V 4V @ 270µA 107 nC @ 10 V ±20V 4893 pF @ 50 V - 313W (Tc) -55°C ~ 175°C (TJ) Through Hole
C2M0280120D

C2M0280120D

SICFET N-CH 1200V 10A TO247-3

Wolfspeed, Inc.

42695 9.04
- +

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C2M0280120D

Datenblatt

Tube Z-FET™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 10A (Tc) 20V 370mOhm @ 6A, 20V 2.8V @ 1.25mA (Typ) 20.4 nC @ 20 V +25V, -10V 259 pF @ 1000 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R070CFD7XKSA1

IPW60R070CFD7XKSA1

MOSFET N-CH 650V 31A TO247-3

Infineon Technologies

877 9.07
- +

In den Warenkorb

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IPW60R070CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 31A (Tc) 10V 70mOhm @ 15.1A, 10V 4.5V @ 760µA 67 nC @ 10 V ±20V 2721 pF @ 400 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
C2M1000170D

C2M1000170D

SICFET N-CH 1700V 4.9A TO247-3

Wolfspeed, Inc.

3163 9.38
- +

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C2M1000170D

Datenblatt

Tube Z-FET™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 4.9A (Tc) 20V 1.1Ohm @ 2A, 20V 2.4V @ 100µA 13 nC @ 20 V +25V, -10V 191 pF @ 1000 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3C120080B7S

UF3C120080B7S

SICFET P-CH 1200V 28.8A D2PAK-7

UnitedSiC

1811 13.71
- +

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UF3C120080B7S

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 28.8A (Tc) - 105mOhm @ 20A, 12V 6V @ 10mA 23 nC @ 12 V ±25V 754 pF @ 100 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UF3C065040B3

UF3C065040B3

MOSFET N-CH 650V 41A TO263

UnitedSiC

800 13.71
- +

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UF3C065040B3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - 650 V 41A (Tc) 12V 52mOhm @ 30A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 176W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TP65H070LSG-TR

TP65H070LSG-TR

GANFET N-CH 650V 25A PQFN88

Transphorm

13260 13.74
- +

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TP65H070LSG-TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TP65H070L Active N-Channel GaNFET (Gallium Nitride) 650 V 25A (Tc) 10V 85mOhm @ 16A, 10V 4.8V @ 700µA 9.3 nC @ 10 V ±20V 600 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMW120R350M1HXKSA1

IMW120R350M1HXKSA1

SICFET N-CH 1.2KV 4.7A TO247-3

Infineon Technologies

101 9.62
- +

In den Warenkorb

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IMW120R350M1HXKSA1

Datenblatt

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 4.7A (Tc) 15V, 18V 455mOhm @ 2A, 18V 5.7V @ 1mA 5.3 nC @ 18 V +23V, -7V 182 pF @ 800 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH42N50P2

IXFH42N50P2

MOSFET N-CH 500V 42A TO247AD

IXYS

416 9.76
- +

In den Warenkorb

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IXFH42N50P2

Datenblatt

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 42A (Tc) 10V 145mOhm @ 500mA, 10V 4.5V @ 4mA 92 nC @ 10 V ±30V 5300 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH12N90P

IXFH12N90P

MOSFET N-CH 900V 12A TO247AD

IXYS

1069 9.95
- +

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IXFH12N90P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 12A (Tc) 10V 900mOhm @ 6A, 10V 6.5V @ 1mA 56 nC @ 10 V ±30V 3080 pF @ 25 V - 380W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP15N50L2

IXTP15N50L2

MOSFET N-CH 500V 15A TO220AB

IXYS

316 9.95
- +

In den Warenkorb

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IXTP15N50L2

Datenblatt

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 480mOhm @ 7.5A, 10V 4.5V @ 250µA 123 nC @ 10 V ±20V 4080 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCA47N60

FCA47N60

MOSFET N-CH 600V 47A TO3PN

onsemi

571 9.96
- +

In den Warenkorb

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FCA47N60

Datenblatt

Tube SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 70mOhm @ 23.5A, 10V 5V @ 250µA 270 nC @ 10 V ±30V 8000 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
C2M1000170J

C2M1000170J

SICFET N-CH 1700V 5.3A D2PAK

Wolfspeed, Inc.

2792 9.97
- +

In den Warenkorb

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C2M1000170J

Datenblatt

Bulk C2M™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 5.3A (Tc) 20V 1.4Ohm @ 2A, 20V 3.1V @ 500µA (Typ) 13 nC @ 20 V +25V, -10V 200 pF @ 1000 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UJ4C075060K3S

UJ4C075060K3S

SICFET N-CH 750V 28A TO247-3

UnitedSiC

6869 10.01
- +

In den Warenkorb

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UJ4C075060K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 28A (Tc) - 74mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
TPH3206PS

TPH3206PS

GANFET N-CH 600V 17A TO220AB

Transphorm

138 10.37
- +

In den Warenkorb

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TPH3206PS

Datenblatt

Tube - Not For New Designs N-Channel GaNFET (Gallium Nitride) 600 V 17A (Tc) 10V 180mOhm @ 11A, 8V 2.6V @ 500µA 9.3 nC @ 4.5 V ±18V 760 pF @ 480 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMW120R220M1HXKSA1

IMW120R220M1HXKSA1

SICFET N-CH 1.2KV 13A TO247-3

Infineon Technologies

210 10.45
- +

In den Warenkorb

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IMW120R220M1HXKSA1

Datenblatt

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 13A (Tc) 15V, 18V 286mOhm @ 4A, 18V 5.7V @ 1.6mA 8.5 nC @ 18 V +23V, -7V 289 pF @ 800 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C120150K3S

UJ3C120150K3S

SICFET N-CH 1200V 18.4A TO247-3

UnitedSiC

960 10.55
- +

In den Warenkorb

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UJ3C120150K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 18.4A (Tc) 12V 180mOhm @ 5A, 12V 5.5V @ 10mA 30 nC @ 15 V ±25V 738 pF @ 100 V - 166.7W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH30N60P

IXTH30N60P

MOSFET N-CH 600V 30A TO247

IXYS

482 10.60
- +

In den Warenkorb

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IXTH30N60P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 240mOhm @ 15A, 10V 5V @ 250µA 82 nC @ 10 V ±30V 5050 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R060C7XKSA1

IPP60R060C7XKSA1

MOSFET N-CH 600V 35A TO220-3

Infineon Technologies

347 10.87
- +

In den Warenkorb

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IPP60R060C7XKSA1

Datenblatt

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Through Hole
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