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Foto Mfr. Teil # Lagerbestand Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
G3R60MT07K

G3R60MT07K

750V 60M TO-247-4 G3R SIC MOSFET

GeneSiC Semiconductor

135 11.02
- +

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G3R60MT07K

Datenblatt

Tube G3R™ Active - SiCFET (Silicon Carbide) 750 V - - - - - - - - - - Through Hole
STW34NM60N

STW34NM60N

MOSFET N-CH 600V 29A TO247-3

STMicroelectronics

3481 11.10
- +

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STW34NM60N

Datenblatt

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 105mOhm @ 14.5A, 10V 4V @ 250µA 80 nC @ 10 V ±25V 2722 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
FCH041N60E

FCH041N60E

MOSFET N-CH 600V 77A TO247-3

onsemi

448 11.61
- +

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FCH041N60E

Datenblatt

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 41mOhm @ 39A, 10V 3.5V @ 250µA 380 nC @ 10 V ±20V 13700 pF @ 100 V - 592W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA130N15X4

IXTA130N15X4

MOSFET N-CH 150V 130A TO263AA

IXYS

1562 11.66
- +

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IXTA130N15X4

Datenblatt

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 8mOhm @ 65A, 10V 4.5V @ 250µA 87 nC @ 10 V ±20V 4770 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0120090J

C3M0120090J

SICFET N-CH 900V 22A D2PAK-7

Wolfspeed, Inc.

7112 11.80
- +

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C3M0120090J

Datenblatt

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 17.3 nC @ 15 V +18V, -8V 350 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UJ4C075033K4S

UJ4C075033K4S

750V/33MOHM, SIC, CASCODE, G4, T

UnitedSiC

526 11.84
- +

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UJ4C075033K4S

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 47A (Tc) 12V 41mOhm @ 30A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 242W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH18N90P

IXFH18N90P

MOSFET N-CH 900V 18A TO247AD

IXYS

300 12.05
- +

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IXFH18N90P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 18A (Tc) 10V 600mOhm @ 500mA, 10V 6.5V @ 1mA 97 nC @ 10 V ±30V 5230 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
LSIC1MO120E0160

LSIC1MO120E0160

SICFET N-CH 1200V 22A TO247-3

Littelfuse Inc.

1154 12.18
- +

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LSIC1MO120E0160

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 20V 200mOhm @ 10A, 20V 4V @ 5mA 57 nC @ 20 V +22V, -6V 870 pF @ 800 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT20P50P

IXTT20P50P

MOSFET P-CH 500V 20A TO268

IXYS

1065 12.86
- +

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IXTT20P50P

Datenblatt

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 450mOhm @ 10A, 10V 4V @ 250µA 103 nC @ 10 V ±20V 5120 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT16P60P

IXTT16P60P

MOSFET P-CH 600V 16A TO268

IXYS

802 12.86
- +

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IXTT16P60P

Datenblatt

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 720mOhm @ 500mA, 10V 4.5V @ 250µA 92 nC @ 10 V ±20V 5120 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT48P20P

IXTT48P20P

MOSFET P-CH 200V 48A TO268

IXYS

3796 12.86
- +

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IXTT48P20P

Datenblatt

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 48A (Tc) 10V 85mOhm @ 24A, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 5400 pF @ 25 V - 462W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMW120R090M1HXKSA1

IMW120R090M1HXKSA1

SICFET N-CH 1.2KV 26A TO247-3

Infineon Technologies

370 13.15
- +

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IMW120R090M1HXKSA1

Datenblatt

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 15V, 18V 117mOhm @ 8.5A, 18V 5.7V @ 3.7mA 21 nC @ 18 V +23V, -7V 707 pF @ 800 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC080SMA120B

MSC080SMA120B

SICFET N-CH 1200V 37A TO247-3

Microchip Technology

3579 13.67
- +

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MSC080SMA120B

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
TP65H070LDG

TP65H070LDG

GANFET N-CH 650V 25A 3PQFN

Transphorm

293 13.74
- +

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TP65H070LDG

Datenblatt

Tube TP65H070L Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 25A (Tc) 10V 85mOhm @ 16A, 10V 4.8V @ 700µA 9.3 nC @ 10 V ±20V 600 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP65R041CFD7XKSA1

IPP65R041CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies

144 13.77
- +

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IPP65R041CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 41mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0120100K

C3M0120100K

SICFET N-CH 1000V 22A TO247-4L

Wolfspeed, Inc.

2957 13.78
- +

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C3M0120100K

Datenblatt

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1000 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 21.5 nC @ 15 V ±15V 350 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTH4L080N120SC1

NTH4L080N120SC1

SICFET N-CH 1200V 29A TO247-4

onsemi

232 14.45
- +

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NTH4L080N120SC1

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 29A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25V, -15V 1670 pF @ 800 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
C3M0060065J

C3M0060065J

SICFET N-CH 650V 36A TO263-7

Wolfspeed, Inc.

1664 14.91
- +

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C3M0060065J

Datenblatt

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 36A (Tc) 15V 79mOhm @ 13.2A, 15V 3.6V @ 5mA 46 nC @ 15 V +15V, -4V 1020 pF @ 600 V - 136W (Tc) -40°C ~ 175°C (TJ) Surface Mount
C3M0060065D

C3M0060065D

SICFET N-CH 650V 37A TO247-3

Wolfspeed, Inc.

431 14.91
- +

In den Warenkorb

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C3M0060065D

Datenblatt

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 37A (Tc) 15V 79mOhm @ 13.2A, 15V 3.6V @ 5mA 46 nC @ 15 V +15V, -4V 1020 pF @ 600 V - 150W (Tc) -40°C ~ 175°C (TJ) Through Hole
IMZ120R090M1HXKSA1

IMZ120R090M1HXKSA1

SICFET N-CH 1.2KV 26A TO247-4

Infineon Technologies

355 15.13
- +

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IMZ120R090M1HXKSA1

Datenblatt

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 15V, 18V 117mOhm @ 8.5A, 18V 5.7V @ 3.7mA 21 nC @ 18 V +23V, -7V 707 pF @ 800 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
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