Foto | Mfr. Teil # | Lagerbestand | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TP90H050WSGANFET N-CH 900V 34A TO247-3 |
172 | 20.03 |
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Datenblatt |
Tube | - | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 900 V | 34A (Tc) | 10V | 63mOhm @ 22A, 10V | 4.4V @ 700µA | 17.5 nC @ 10 V | ±20V | 980 pF @ 600 V | - | 119W (Tc) | -55°C ~ 150°C | Through Hole | |
NTHL027N65S3HFMOSFET N-CH 650V 75A TO247-3 |
342 | 20.33 |
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Datenblatt |
Tube | FRFET®, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 3mA | 225 nC @ 10 V | ±30V | 7630 pF @ 400 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
UJ3C065030B3MOSFET N-CH 650V 65A TO263 |
2948 | 19.39 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | - | 650 V | 65A (Tc) | 12V | 35mOhm @ 50A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IXFH44N50Q3MOSFET N-CH 500V 44A TO247AD |
3839 | 20.83 |
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Datenblatt |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 6.5V @ 4mA | 93 nC @ 10 V | ±30V | 4800 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
UF3C065040K3SMOSFET N-CH 650V 54A TO247-3 |
2481 | 13.95 |
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Datenblatt |
Tube | - | Active | N-Channel | - | 650 V | 54A (Tc) | 12V | 52mOhm @ 40A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFT16N120PMOSFET N-CH 1200V 16A TO268 |
114 | 21.27 |
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Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 16A (Tc) | 10V | 950mOhm @ 500mA, 10V | 6.5V @ 1mA | 120 nC @ 10 V | ±30V | 6900 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IXTX90P20PMOSFET P-CH 200V 90A PLUS247-3 |
361 | 22.60 |
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Datenblatt |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 44mOhm @ 22A, 10V | 4V @ 1mA | 205 nC @ 10 V | ±20V | 12000 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SCT3105KRC14SICFET N-CH 1200V 24A TO247-4L |
137 | 22.80 |
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Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 134W | 175°C (TJ) | Through Hole | |
IXFX32N100PMOSFET N-CH 1000V 32A PLUS247-3 |
1240 | 22.98 |
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Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 320mOhm @ 16A, 10V | 6.5V @ 1mA | 225 nC @ 10 V | ±30V | 14200 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TP65H035WSQAGANFET N-CH 650V 47.2A TO247-3 |
545 | 23.20 |
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Datenblatt |
Tube | Automotive, AEC-Q101 | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 47.2A (Tc) | 10V | 41mOhm @ 32A, 10V | 4.5V @ 1mA | 24 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
C3M0040120D1200V 40MOHM SIC MOSFET |
597 | 24.32 |
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Datenblatt |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.5mA | 101 nC @ 15 V | +15V, -4V | 2900 pF @ 1000 V | - | 326W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | |
IXTT2N170D2MOSFET N-CH 1700V 2A TO268 |
520 | 25.61 |
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Datenblatt |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1700 V | 2A (Tj) | - | 6.5Ohm @ 1A, 0V | - | 110 nC @ 5 V | ±20V | 3650 pF @ 25 V | Depletion Mode | 568W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
2N6660MOSFET N-CH 60V 410MA TO39 |
2154 | 16.57 |
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Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 410mA (Ta) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 24 V | - | 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
C3M0025065KGEN 3 650V 25 M SIC MOSFET |
930 | 27.87 |
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Datenblatt |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 97A (Tc) | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | 112 nC @ 15 V | +19V, -8V | 2980 pF @ 600 V | - | 326W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | |
C3M0025065DGEN 3 650V 25 M SIC MOSFET |
782 | 27.87 |
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Datenblatt |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 97A (Tc) | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | 108 nC @ 15 V | +19V, -8V | 2980 pF @ 600 V | - | 326W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | |
IMW65R027M1HXKSA1MOSFET 650V NCH SIC TRENCH |
136 | 28.06 |
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Tube | - | Active | - | - | - | 47A (Tc) | - | - | - | - | - | - | - | - | - | - | ||
IPW60R017C7XKSA1HIGH POWER_NEW |
224 | 29.88 |
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Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 109A (Tc) | 10V | 17mOhm @ 58.2A, 10V | 4V @ 2.91mA | 240 nC @ 10 V | ±20V | 9890 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
NTHL020N090SC1SICFET N-CH 900V 118A TO247-3 |
269 | 31.67 |
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Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 118A (Tc) | 15V | 28mOhm @ 60A, 15V | 4.3V @ 20mA | 196 nC @ 15 V | +19V, -10V | 4415 pF @ 450 V | - | 503W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
TP65H015G5WS650 V 95 A GAN FET |
456 | 35.14 |
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Datenblatt |
Tube | SuperGaN™ | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 93A (Tc) | 10V | 18mOhm @ 60A, 10V | 4.8V @ 2mA | 100 nC @ 10 V | ±20V | 5218 pF @ 400 V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTN102N65X2MOSFET N-CH 650V 76A SOT227 |
220 | 35.21 |
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Datenblatt |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 30mOhm @ 51A, 10V | 5V @ 250µA | 152 nC @ 10 V | ±30V | 10900 pF @ 25 V | - | 595AW (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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